| Issue |
Title |
File |
| Vol 51, No 11 (2017) |
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate |
(Eng)
|
|
Aleshkin V.Y., Baidus N.V., Dubinov A.A., Kudryavtsev K.E., Nekorkin S.M., Novikov A.V., Rykov A.V., Samartsev I.V., Fefelov A.G., Yurasov D.V., Krasilnik Z.F.
|
| Vol 51, No 11 (2017) |
Thermoelectric effects in nanoscale layers of manganese silicide |
(Eng)
|
|
Erofeeva I.V., Dorokhin M.V., Lesnikov V.P., Kuznetsov Y.M., Zdoroveyshchev A.V., Pitirimova E.A.
|
| Vol 51, No 11 (2017) |
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography |
(Eng)
|
|
Borisov V.I., Kuvshinova N.A., Kurochka S.P., Sizov V.E., Stepushkin M.V., Temiryazev A.G.
|
| Vol 51, No 11 (2017) |
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures |
(Eng)
|
|
Degtyarev V.E., Khazanova S.V., Konakov A.A.
|
| Vol 51, No 11 (2017) |
Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy |
(Eng)
|
|
Murel A.V., Shmagin V.B., Krukov V.L., Strelchenko S.S., Surovegina E.A., Shashkin V.I.
|
| Vol 51, No 11 (2017) |
Features of the selective manganese doping of GaAs structures |
(Eng)
|
|
Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Dorokhin M.V., Pavlov D.A., Antonov I.N., Drozdov M.N., Usov Y.V.
|
| Vol 51, No 11 (2017) |
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation |
(Eng)
|
|
Tarasova E.A., Obolensky S.V., Galkin O.E., Hananova A.V., Makarov A.B.
|
| Vol 51, No 11 (2017) |
Contactless characterization of manganese and carbon delta-layers in gallium arsenide |
(Eng)
|
|
Komkov O.S., Kudrin A.V.
|
| Vol 51, No 11 (2017) |
Cyclotron resonance features in a three-dimensional topological insulators |
(Eng)
|
|
Turkevich R.V., Demikhovskii V.Y., Protogenov A.P.
|
| Vol 51, No 11 (2017) |
Inhomogeneous dopant distribution in III–V nanowires |
(Eng)
|
|
Leshchenko E.D., Dubrovskii V.G.
|
| Vol 51, No 11 (2017) |
Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures |
(Eng)
|
|
Fateev D.V., Mashinsky K.V., Qin H., Sun J., Popov V.V.
|
| Vol 51, No 11 (2017) |
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
(Eng)
|
|
Kulagina M.M., Kuzmenkov A.G., Nevedomskii V.N., Guseva Y.A., Maleev S.N., Ladenkov I.V., Fefelova E.L., Fefelov A.G., Ustinov V.M., Maleev N.A., Belyakov V.A., Vasil’ev A.P., Bobrov M.A., Blokhin S.A.
|
| Vol 51, No 11 (2017) |
Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator |
(Eng)
|
|
Khomitsky D.V., Lavrukhina E.A., Chubanov A.A., Njiya N.
|
| Vol 51, No 11 (2017) |
Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects |
(Eng)
|
|
Zabavichev I.Y., Obolenskaya E.S., Potekhin A.A., Puzanov A.S., Obolensky S.V., Kozlov V.A.
|
| Vol 51, No 11 (2017) |
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures |
(Eng)
|
|
Nikiforov V.E., Abramkin D.S., Shamirzaev T.S.
|
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