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Volume 53, Nº 15 (2019)
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.
PDF
(Eng)
Volume 52, Nº 9 (2018)
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles
Stovpiaga E., Eurov D., Kurdyukov D., Smirnov A., Yagovkina M., Yakovlev D., Golubev V.
PDF
(Eng)
Volume 50, Nº 5 (2016)
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
Virko M., Kogotkov V., Leonidov A., Voronenkov V., Rebane Y., Zubrilov A., Gorbunov R., Latyshev P., Bochkareva N., Lelikov Y., Tarhin D., Smirnov A., Davydov V., Shreter Y.
PDF
(Eng)
Volume 53, Nº 8 (2019)
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Seredin P., Goloshchapov D., Zolotukhin D., Lenshin A., Mizerov A., Arsentyev I., Leiste H., Rinke M.
PDF
(Eng)
Volume 52, Nº 11 (2018)
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.
PDF
(Eng)
Volume 53, Nº 8 (2019)
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition
Uvarov A., Zelentsov K., Gudovskikh A.
PDF
(Eng)
Volume 52, Nº 11 (2018)
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Antonov I.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
Korolev D., Mikhaylov A., Belov A., Vasiliev V., Guseinov D., Okulich E., Shemukhin A., Surodin S., Nikolitchev D., Nezhdanov A., Pirogov A., Pavlov D., Tetelbaum D.
PDF
(Eng)
Volume 53, Nº 8 (2019)
Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment
Sladkopevtsev B., Kotov G., Arsentyev I., Shashkin I., Mittova I., Tomina E., Samsonov A., Kostenko P.
PDF
(Eng)
Volume 52, Nº 9 (2018)
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
Anisimov A., Wolfson A., Mokhov E.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface
Bakulin A., Kulkova S.
PDF
(Eng)
Volume 52, Nº 16 (2018)
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas
Demir I., Altuntas I., Kasapoğlu A., Mobtakeri S., Gür E., Elagoz S.
PDF
(Eng)
Volume 52, Nº 15 (2018)
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers
Revin M., Kotkov A., Ivanov V., Rad’kov Y., Svinkov N., Artemov A., Gribov B.
PDF
(Eng)
Volume 50, Nº 13 (2016)
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M., Borgardt N., Bugaev A., Volkov R., Seibt M.
PDF
(Eng)
Volume 52, Nº 15 (2018)
Quantum Efficiency of Gallium Nitride–Based Heterostructures with GaInN Quantum Wells
Vigdorovich E.
PDF
(Eng)
Volume 53, Nº 12 (2019)
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy
Levin R., Vlasov A., Smirnov A., Pushnyi B.
PDF
(Eng)
Volume 52, Nº 11 (2018)
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut
Drozdov Y., Khrikin O., Yunin P.
PDF
(Eng)
Volume 50, Nº 5 (2016)
GaAs/InGaAsN heterostructures for multi-junction solar cells
Nikitina E., Gudovskikh A., Lazarenko A., Pirogov E., Sobolev M., Zelentsov K., Morozov I., Egorov A.
PDF
(Eng)
Volume 53, Nº 11 (2019)
High-Voltage AlInGaN LED Chips
Markov L., Kukushkin M., Pavlyuchenko A., Smirnova I., Itkinson G., Osipov O.
PDF
(Eng)
Volume 52, Nº 11 (2018)
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma
Okhapkin A., Yunin P., Drozdov M., Kraev S., Skorokhodov E., Shashkin V.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P., Donskov A., Dukhnovsky M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
PDF
(Eng)
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