| Edição |
Título |
Arquivo |
| Volume 50, Nº 8 (2016) |
Electromagnetic radiation of electrons in corrugated graphene |
|
|
Ktitorov S., Myhamadiarov R.
|
| Volume 52, Nº 14 (2018) |
Electromechanical Switch Based on InxGa1 –xAs Nanowires |
|
|
Alekseev P., Sharov V., Dunaevskiy M., Cirlin G., Reznik R., Berkovits V.
|
| Volume 53, Nº 6 (2019) |
Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation |
|
|
Sitnikov S., Rodyakina E., Latyshev A.
|
| Volume 52, Nº 1 (2018) |
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells |
|
|
Gudina S., Neverov V., Ilchenko E., Bogolubskii A., Harus G., Shelushinina N., Podgornykh S., Yakunin M., Mikhailov N., Dvoretsky S.
|
| Volume 51, Nº 4 (2017) |
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide |
|
|
Marchenko A., Terukov E., Egorova A., Kiselev V., Seregin P.
|
| Volume 50, Nº 7 (2016) |
Electron exchange between tin impurity U– centers in PbSzSe1–z alloys |
|
|
Marchenko A., Terukov E., Seregin P., Rasnjuk A., Kiselev V.
|
| Volume 53, Nº 15 (2019) |
Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation |
|
|
Grishina Y., Borgardt N., Volkov R., Gromov D., Savitskiy A.
|
| Volume 53, Nº 13 (2019) |
Electron Mobility Calculation of Diluted III–V-Nitrides Alloys |
|
|
Chakir K., Bilel C., Rebey A.
|
| Volume 51, Nº 4 (2017) |
Electron mobility in the inversion layers of fully depleted SOI films |
|
|
Zaitseva E., Naumova O., Fomin B.
|
| Volume 51, Nº 6 (2017) |
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates |
|
|
Galiev G., Klochkov A., Vasil’evskii I., Klimov E., Pushkarev S., Vinichenko A., Khabibullin R., Maltsev P.
|
| Volume 50, Nº 2 (2016) |
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates |
|
|
Khabibullin R., Yachmenev A., Lavrukhin D., Ponomarev D., Bugayev A., Maltsev P.
|
| Volume 52, Nº 15 (2018) |
Electron Transport by a Transverse Acoustoelectric Stoneley Wave |
|
|
Morocha A., Rozhkov A.
|
| Volume 52, Nº 2 (2018) |
Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping |
|
|
Safonov D., Vinichenko A., Kargin N., Vasil’evskii I.
|
| Volume 52, Nº 3 (2018) |
Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations |
|
|
Davydov S.
|
| Volume 53, Nº 12 (2019) |
Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials |
|
|
Maslov A., Proshina O.
|
| Volume 50, Nº 7 (2016) |
Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum |
|
|
Kotousova I., Lebedev S., Lebedev A.
|
| Volume 53, Nº 16 (2019) |
Electronic and Optical Properties of Perovskite Quantum-Dot Dimer |
|
|
Tepliakov N., Vovk I., Leonov M., Baranov A., Fedorov A., Rukhlenko I.
|
| Volume 53, Nº 2 (2019) |
Electronic Excitation Energy Transfer in an Array of CdS Quantum Dots on a Quasi-Two-Dimensional Surface |
|
|
Bondar N., Brodyn M., Matveevskaya N., Beynik T.
|
| Volume 51, Nº 5 (2017) |
Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method |
|
|
Zarubanov A., Plyusnin V., Zhuravlev K.
|
| Volume 52, Nº 8 (2018) |
Electronic Processes in CdIn2Te4 Crystals |
|
|
Grushka O., Chupyra S., Bilichuk S., Parfenyuk O.
|
| Volume 52, Nº 4 (2018) |
Electronic States and Persistent Currents in Nanowire Quantum Ring |
|
|
Kokurin I.
|
| Volume 53, Nº 16 (2019) |
Electronic States in Cylindrical Core-Multi-Shell Nanowire |
|
|
Rudakov A., Kokurin I.
|
| Volume 53, Nº 10 (2019) |
Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form |
|
|
Zavodinsky V., Kuz’menko A.
|
| Volume 52, Nº 3 (2018) |
Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System |
|
|
Borshch N., Kurganskii S.
|
| Volume 50, Nº 4 (2016) |
Electronic structure of Pt-substituted clathrate silicides Ba8PtxSi46–x(x = 4–6) |
|
|
Borshch N.
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