Issue |
Section |
Title |
File |
Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Si:Si LEDs with room-temperature dislocation-related luminescence |
|
Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties |
|
Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Electroluminescence properties of LEDs based on electron-irradiated p-Si |
|
Vol 51, No 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Injection-induced terahertz electroluminescence from silicon p–n structures |
|
Vol 51, No 9 (2017) |
Electronic Properties of Semiconductors |
Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon |
|
Vol 53, No 2 (2019) |
Electronic Properties of Semiconductors |
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions |
|
Vol 53, No 2 (2019) |
Spectroscopy, Interaction with Radiation |
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |
|
Vol 53, No 4 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film |
|