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Structural, Thermal and Luminescence Properties of AlN:Tm Thin Films Deposited on Silicon Substrate and Optical Fiber
Muhammad Maqbool , Alruwaili A., Milinovic D., Khan T., Ali G., Ahmad I.
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles
Stovpiaga E.Y., Eurov D.A., Kurdyukov D.A., Smirnov A.N., Yagovkina M.A., Yakovlev D.R., Golubev V.G.
Ultrasonic-Assisted Exfoliation of Graphitic Carbon Nitride and its Electrocatalytic Performance in Process of Ethanol Reforming
Chebanenko M.I., Zakharova N.V., Lobinsky A.A., Popkov V.I.
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas
Demir I., Altuntas I., Kasapoğlu A.E., Mobtakeri S., Gür E., Elagoz S.
Improving the functional characteristics of gallium nitride during vapor phase epitaxy
Vigdorovich E.N.
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.N.
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition
Novak A.V., Novak V.R., Dedkova A.A., Gusev E.E.
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
Virko M.V., Kogotkov V.S., Leonidov A.A., Voronenkov V.V., Rebane Y.T., Zubrilov A.S., Gorbunov R.I., Latyshev P.E., Bochkareva N.I., Lelikov Y.S., Tarhin D.V., Smirnov A.N., Davydov V.Y., Shreter Y.G.
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates
Timoshnev S.N., Mizerov A.M., Lapushkin M.N., Kukushkin S.A., Bouravleuv A.D.
Quantum Efficiency of Gallium Nitride–Based Heterostructures with GaInN Quantum Wells
Vigdorovich E.N.
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P.A., Donskov A.A., Dukhnovsky M.P., Knyazev S.N., Kozlova Y.P., Yugova T.G., Belogorokhov I.A.
Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
Arteev D.S., Sakharov A.V., Lundin W.V., Zavarin E.E., Zakheim D.A., Tsatsulnikov A.F.
Formation of a Graphene-Like SiN Layer on the Surface Si(111)
Mansurov V.G., Galitsyn Y.G., Malin T.V., Teys S.A., Fedosenko E.V., Kozhukhov A.S., Zhuravlev K.S., Cora I., Pécz B.
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
Sharofidinov S.S., Nikolaev V.I., Smirnov A.N., Chikiryaka A.V., Nikitina I.P., Odnoblyudov M.A., Bugrov V.E., Romanov A.E.
High-Voltage AlInGaN LED Chips
Markov L.K., Kukushkin M.V., Pavlyuchenko A.S., Smirnova I.P., Itkinson G.V., Osipov O.V.
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut
Drozdov Y.N., Khrikin O.I., Yunin P.A.
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.I.
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Andreev B.A., Lobanov D.N., Krasil’nikova L.V., Bushuykin P.A., Yablonskiy A.N., Novikov A.V., Davydov V.Y., Yunin P.A., Kalinnikov M.I., Skorohodov E.V., Krasil’nik Z.F.
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
Yunin P.A., Drozdov Y.N., Khrykin O.I., Grigoryev V.A.
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Lobanov D.N., Novikov A.V., Andreev B.A., Bushuykin P.A., Yunin P.A., Skorohodov E.V., Krasilnikova L.V.
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Seredin P.V., Goloshchapov D.L., Zolotukhin D.S., Lenshin A.S., Mizerov A.M., Arsentyev I.N., Leiste H., Rinke M.
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
Anisimov A.N., Wolfson A.A., Mokhov E.N.
1 - 22 of 22 Items

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