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Vol 53, No 11 (2019)

Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching

Levitskii Y.V., Mitrofanov M.I., Voznyuk G.V., Nikolayev D.N., Mizerov M.N., Evtikhiev V.P.

(Eng)

Vol 53, No 11 (2019)

Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions

Cherkova S.G., Skuratov V.A., Volodin V.A.

(Eng)

Vol 53, No 9 (2019)

Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure

Zabavichev I.Y., Potehin A.A., Puzanov A.S., Obolenskiy S.V., Kozlov V.A.

(Eng)

Vol 53, No 9 (2019)

Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures

Kozlov D.V., Rumyantsev V.V., Morozov S.V.

(Eng)

Vol 52, No 12 (2018)

Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects

Kozlovski V.V., Lebedev A.A., Davydovskaya K.S., Lyubimova Y.V.

(Eng)

Vol 52, No 11 (2018)

Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg_{1 –}_xCd_xTe Layers

Kozlov D.V., Rumyantsev V.V., Morozov S.V., Kadykov A.M., Fadeev M.A., Hübers H., Gavrilenko V.I.

(Eng)

Vol 53, No 16 (2019)

Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam

Sakharov A.V., Kaliteevskii M.A., Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Tsatsulnikov A.F., Lundin W.V., Rodin S.N., Usov S.O., Evtikhiev V.P.

(Eng)

Vol 52, No 9 (2018)

Superficial Defect Formation in CdTe under the Radiation Effect of a CO₂ Laser

Shkumbatjuk P.S.

(Eng)

Vol 53, No 12 (2019)

Edge Doping in Graphene Devices on SiO₂ Substrates

Vasilyeva G.Y., Smirnov D., Vasilyev Y.B., Greshnov A.A., Haug R.J.

(Eng)

Vol 52, No 9 (2018)

Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions

Okulich E.V., Okulich V.I., Tetelbaum D.I.

(Eng)

1 - 10 of 10 Items

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