| Issue |
Section |
Title |
File |
| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Elastic strains and delocalized optical phonons in AlN/GaN superlattices |
|
| Vol 50, No 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InGaN/GaN light-emitting diode microwires of submillimeter length |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography |
|
| Vol 52, No 14 (2018) |
Nanostructure Devices |
Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy |
|
| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates |
|
| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells |
|
| Vol 53, No 16 (2019) |
Nanostructures Technology |
Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB |
|
| Vol 53, No 16 (2019) |
Nanostructures Technology |
Selective Epitaxy of Submicron GaN Structures |
|
| Vol 53, No 16 (2019) |
Nanostructures Technology |
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |
|
