| Issue |
Title |
File |
| Vol 53, No 13 (2019) |
Effect of Deposition Time on Structural, Morphological and Optical Properties of PVA Capped SnS Films Grown by CBD Process |
(Eng)
|
|
Devi P.M., Reddy G.P., Reddy K.T.
|
| Vol 53, No 11 (2019) |
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions |
(Eng)
|
|
Cherkova S.G., Skuratov V.A., Volodin V.A.
|
| Vol 53, No 4 (2019) |
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies |
(Eng)
|
|
Bazhenov N.L., Mynbaev K.D., Semakova A.A., Zegrya G.G.
|
| Vol 53, No 3 (2019) |
Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K |
(Eng)
|
|
Makhniy V.P., Vakhnyak N.D., Kinzerska O.V., Pyryatynsky Y.P.
|
| Vol 53, No 2 (2019) |
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |
(Eng)
|
|
Sobolev N.A., Kalyadin A.E., Sakharov V.I., Serenkov I.T., Shek E.I., Parshin E.O., Melesov N.S., Simakin C.G.
|
| Vol 52, No 13 (2018) |
Intracenter Radiative Transitions at Tantalum Impurity Centers in Cadmium Telluride |
(Eng)
|
|
Ushakov V.V., Aminev D.F., Krivobok V.S.
|
| Vol 52, No 10 (2018) |
Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering |
(Eng)
|
|
Mezdrogina M.M., Vinogradov A.J., Kozhanova Y.V.
|
| Vol 52, No 10 (2018) |
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering |
(Eng)
|
|
Svitsiankou I.E., Pavlovskii V.N., Lutsenko E.V., Yablonskii G.P., Shiripov V.Y., Khokhlov E.A., Mudryi A.V., Zhivulko V.D., Borodavchenko O.M., Yakushev M.V.
|
| Vol 52, No 9 (2018) |
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions |
(Eng)
|
|
Okulich E.V., Okulich V.I., Tetelbaum D.I.
|
| Vol 52, No 9 (2018) |
Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals |
(Eng)
|
|
Tolkacheva E.A., Markevich V.P., Murin L.I.
|
| Vol 52, No 7 (2018) |
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation |
(Eng)
|
|
Tereshchenko A.N., Korolev D.S., Mikhaylov A.N., Belov A.I., Nikolskaya A.A., Pavlov D.A., Tetelbaum D.I., Steinman E.A.
|
| Vol 52, No 7 (2018) |
Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates |
(Eng)
|
|
Avakyants L.P., Bokov P.Y., Kazakov I.P., Bazalevsky M.A., Deev P.M., Chervyakov A.V.
|
| Vol 52, No 6 (2018) |
Rb1 – xCsxNO3 (x = 0.025, 0.05, 0.1) Single Crystals and Their High-Temperature X-Ray Study |
(Eng)
|
|
Haziyeva A.F., Nasirov V.I., Asadov Y.G., Aliyev Y.I., Jabarov S.H.
|
| Vol 52, No 6 (2018) |
Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations |
(Eng)
|
|
Volodin V.A., Sachkov V.A., Sinyukov M.P.
|
| Vol 52, No 2 (2018) |
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range |
(Eng)
|
|
Ulashkevich Y.V., Kaminskiy V.V., Romanova M.V., Sharenkova N.V.
|
| Vol 52, No 2 (2018) |
Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films |
(Eng)
|
|
Abdullin K.A., Gritsenko L.V., Kumekov S.E., Markhabaeva A.A., Terukov E.I.
|
| Vol 52, No 1 (2018) |
Infrared Reflection Spectra of Pb1–xSnxSe (x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures |
(Eng)
|
|
Novikova N.N., Yakovlev V.A., Kucherenko I.V., Vinogradov V.S., Aleschenko Y.A., Muratov A.V., Karczewski G., Chusnutdinow S.
|
| Vol 51, No 10 (2017) |
Reflectance spectra of p-Bi2Te3:Sn crystals in a wide IR region |
(Eng)
|
|
Nemov S.A., Ulashkevich Y.V., Allahkhah A.A.
|
| Vol 51, No 8 (2017) |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
(Eng)
|
|
Lebedev A.A., Ber B.Y., Oganesyan G.A., Belov S.V., Lebedev S.P., Nikitina I.P., Seredova N.V., Shakhov L.V., Kozlovski V.V.
|
| Vol 51, No 5 (2017) |
Optical an photoelectric properties odf ZnSe:Ti crystals |
(Eng)
|
|
Nitsuk Y.A., Vaksman Y.F.
|
| Vol 51, No 5 (2017) |
Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method |
(Eng)
|
|
Zarubanov A.A., Plyusnin V.F., Zhuravlev K.S.
|
| Vol 51, No 3 (2017) |
Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region |
(Eng)
|
|
Klyui N.I., Lozinskii V.B., Liptuga A.I., Dikusha V.N., Oksanych A.P., Kogdas’ M.G., Perekhrest A.L., Pritchin S.E.
|
| Vol 51, No 3 (2017) |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
(Eng)
|
|
Galiev G.B., Grekhov M.M., Kitaeva G.K., Klimov E.A., Klochkov A.N., Kolentsova O.S., Kornienko V.V., Kuznetsov K.A., Maltsev P.P., Pushkarev S.S.
|
| Vol 51, No 3 (2017) |
Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals |
(Eng)
|
|
Nemov S.A., Ulashkevich Y.V.
|
| Vol 51, No 3 (2017) |
Radiative d–d transitions at tungsten centers in II–VI semiconductors |
(Eng)
|
|
Ushakov V.V., Krivobok V.S., Pruchkina A.A.
|
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