期 |
标题 |
文件 |
卷 53, 编号 13 (2019) |
Effect of Deposition Time on Structural, Morphological and Optical Properties of PVA Capped SnS Films Grown by CBD Process |
 (Eng)
|
Devi P., Reddy G., Reddy K.
|
卷 53, 编号 11 (2019) |
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions |
 (Eng)
|
Cherkova S., Skuratov V., Volodin V.
|
卷 53, 编号 4 (2019) |
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies |
 (Eng)
|
Bazhenov N., Mynbaev K., Semakova A., Zegrya G.
|
卷 53, 编号 3 (2019) |
Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K |
 (Eng)
|
Makhniy V., Vakhnyak N., Kinzerska O., Pyryatynsky Y.
|
卷 53, 编号 2 (2019) |
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |
 (Eng)
|
Sobolev N., Kalyadin A., Sakharov V., Serenkov I., Shek E., Parshin E., Melesov N., Simakin C.
|
卷 52, 编号 13 (2018) |
Intracenter Radiative Transitions at Tantalum Impurity Centers in Cadmium Telluride |
 (Eng)
|
Ushakov V., Aminev D., Krivobok V.
|
卷 52, 编号 10 (2018) |
Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering |
 (Eng)
|
Mezdrogina M., Vinogradov A., Kozhanova Y.
|
卷 52, 编号 10 (2018) |
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering |
 (Eng)
|
Svitsiankou I., Pavlovskii V., Lutsenko E., Yablonskii G., Shiripov V., Khokhlov E., Mudryi A., Zhivulko V., Borodavchenko O., Yakushev M.
|
卷 52, 编号 9 (2018) |
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions |
 (Eng)
|
Okulich E., Okulich V., Tetelbaum D.
|
卷 52, 编号 9 (2018) |
Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals |
 (Eng)
|
Tolkacheva E., Markevich V., Murin L.
|
卷 52, 编号 7 (2018) |
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation |
 (Eng)
|
Tereshchenko A., Korolev D., Mikhaylov A., Belov A., Nikolskaya A., Pavlov D., Tetelbaum D., Steinman E.
|
卷 52, 编号 7 (2018) |
Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates |
 (Eng)
|
Avakyants L., Bokov P., Kazakov I., Bazalevsky M., Deev P., Chervyakov A.
|
卷 52, 编号 6 (2018) |
Rb1 – xCsxNO3 (x = 0.025, 0.05, 0.1) Single Crystals and Their High-Temperature X-Ray Study |
 (Eng)
|
Haziyeva A., Nasirov V., Asadov Y., Aliyev Y., Jabarov S.
|
卷 52, 编号 6 (2018) |
Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations |
 (Eng)
|
Volodin V., Sachkov V., Sinyukov M.
|
卷 52, 编号 2 (2018) |
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range |
 (Eng)
|
Ulashkevich Y., Kaminskiy V., Romanova M., Sharenkova N.
|
卷 52, 编号 2 (2018) |
Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films |
 (Eng)
|
Abdullin K., Gritsenko L., Kumekov S., Markhabaeva A., Terukov E.
|
卷 52, 编号 1 (2018) |
Infrared Reflection Spectra of Pb1–xSnxSe (x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures |
 (Eng)
|
Novikova N., Yakovlev V., Kucherenko I., Vinogradov V., Aleschenko Y., Muratov A., Karczewski G., Chusnutdinow S.
|
卷 51, 编号 10 (2017) |
Reflectance spectra of p-Bi2Te3:Sn crystals in a wide IR region |
 (Eng)
|
Nemov S., Ulashkevich Y., Allahkhah A.
|
卷 51, 编号 8 (2017) |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
 (Eng)
|
Lebedev A., Ber B., Oganesyan G., Belov S., Lebedev S., Nikitina I., Seredova N., Shakhov L., Kozlovski V.
|
卷 51, 编号 5 (2017) |
Optical an photoelectric properties odf ZnSe:Ti crystals |
 (Eng)
|
Nitsuk Y., Vaksman Y.
|
卷 51, 编号 5 (2017) |
Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method |
 (Eng)
|
Zarubanov A., Plyusnin V., Zhuravlev K.
|
卷 51, 编号 3 (2017) |
Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region |
 (Eng)
|
Klyui N., Lozinskii V., Liptuga A., Dikusha V., Oksanych A., Kogdas’ M., Perekhrest A., Pritchin S.
|
卷 51, 编号 3 (2017) |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
 (Eng)
|
Galiev G., Grekhov M., Kitaeva G., Klimov E., Klochkov A., Kolentsova O., Kornienko V., Kuznetsov K., Maltsev P., Pushkarev S.
|
卷 51, 编号 3 (2017) |
Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals |
 (Eng)
|
Nemov S., Ulashkevich Y.
|
卷 51, 编号 3 (2017) |
Radiative d–d transitions at tungsten centers in II–VI semiconductors |
 (Eng)
|
Ushakov V., Krivobok V., Pruchkina A.
|
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