| Issue |
Title |
File |
| Vol 53, No 13 (2019) |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
(Eng)
|
|
Singh A.K., Chandra D., Kattayat S., Kumar S., Alvi P.A., Rathi A.
|
| Vol 53, No 13 (2019) |
Electron Mobility Calculation of Diluted III–V-Nitrides Alloys |
(Eng)
|
|
Chakir K., Bilel C., Rebey A.
|
| Vol 53, No 12 (2019) |
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs |
(Eng)
|
|
Lebedev A.A., Levinshtein M.E., Ivanov P.A., Kozlovski V.V., Strel’chuk A.M., Shabunina E.I., Fursin L.
|
| Vol 53, No 12 (2019) |
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures |
(Eng)
|
|
Muratov T.T.
|
| Vol 53, No 12 (2019) |
On the Characteristic Features of the Impurity Energy Spectrum in Arsenides |
(Eng)
|
|
Kamiliov I.K., Daunov M.I., Gajiev G.M., Arslanov R.K.
|
| Vol 53, No 12 (2019) |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
(Eng)
|
|
Singh A.K., Chandra D., Kattayat S., Kumar S., Alvi P.A., Rathi A.
|
| Vol 53, No 12 (2019) |
Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals |
(Eng)
|
|
Bodnar I.V., Chan B.T., Pavlovskii V.N., Svitsiankou I.E., Yablonskii G.P.
|
| Vol 53, No 11 (2019) |
Temperature Coefficient of Movement of the Resonance Level of Iron in Pb1 – x – ySnxFeyTe Alloys |
(Eng)
|
|
Skipetrov E.P., Kovalev B.B., Skipetrova L.A., Knotko A.V., Slynko V.E.
|
| Vol 53, No 10 (2019) |
Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid |
(Eng)
|
|
Alekseev P.S.
|
| Vol 53, No 10 (2019) |
Microwave Magnetic Absorption in HgSe with Co and Ni Impurities |
(Eng)
|
|
Veinger A.I., Kochman I.V., Frolov D.A., Okulov V.I., Govorkova T.E., Paranchich L.D.
|
| Vol 53, No 8 (2019) |
Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field |
(Eng)
|
|
Kamilov I.K., Stepurenko A.A., Gummetov A.E.
|
| Vol 53, No 8 (2019) |
Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals |
(Eng)
|
|
Avanesyan V.T., Piskovatskova I.V., Stozharov V.M.
|
| Vol 53, No 8 (2019) |
Some Physical Properties of the New Intermetallic Compound NbCd2 |
(Eng)
|
|
Tuleushev Y.Z., Zhakanbaev E.A., Migunova A.A., Nicenko A.B., Volodin V.N.
|
| Vol 53, No 7 (2019) |
Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint |
(Eng)
|
|
Prokofieva L.V., Konstantinov P.P.
|
| Vol 53, No 7 (2019) |
Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium |
(Eng)
|
|
Yurasov D.V., Baidakova N.A., Drozdov M.N., Morozova E.E., Kalinnikov M.A., Novikov A.V.
|
| Vol 53, No 7 (2019) |
On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide |
(Eng)
|
|
Kazanin M.M., Kaminski V.V., Grevtsev M.A.
|
| Vol 53, No 6 (2019) |
Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory |
(Eng)
|
|
Morozova N.K., Miroshnikova I.N., Galstyan V.G.
|
| Vol 53, No 6 (2019) |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
(Eng)
|
|
Yarykin N., Shuman V.B., Portsel L.M., Lodygin A.N., Astrov Y.A., Abrosimov N.V., Weber J.
|
| Vol 53, No 5 (2019) |
On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes |
(Eng)
|
|
Davydov S.Y.
|
| Vol 53, No 4 (2019) |
Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths |
(Eng)
|
|
Dmitriev A.V.
|
| Vol 53, No 3 (2019) |
Specific Features of the Electron Spin Resonance of an Iron Impurity in HgSe Crystals |
(Eng)
|
|
Veinger A.I., Kochman I.V., Okulov V.I., Govorkova T.A., Andriichuk M.D., Paranchich L.D.
|
| Vol 53, No 3 (2019) |
Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions |
(Eng)
|
|
Novikov G.F., Rabenok E.V., Orishina P.S., Gapanovich M.V., Odin I.N.
|
| Vol 53, No 2 (2019) |
Features of the Properties of Rare-Earth Semiconductors |
(Eng)
|
|
Kaminski V.V., Sharenkova N.V.
|
| Vol 53, No 2 (2019) |
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions |
(Eng)
|
|
Sobolev N.A., Aleksandrov O.V., Sakharov V.I., Serenkov I.T., Shek E.I., Kalyadin A.E., Parshin E.O., Melesov N.S.
|
| Vol 53, No 1 (2019) |
Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals |
(Eng)
|
|
Gladilin A.A., Ilichev N.N., Kalinushkin V.P., Studenikin M.I., Uvarov O.V., Chapnin V.A., Tumorin V.V., Novikov G.G.
|
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