| Edição |
Título |
Arquivo |
| Volume 53, Nº 13 (2019) |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
(Eng)
|
|
Singh A., Chandra D., Kattayat S., Kumar S., Alvi P., Rathi A.
|
| Volume 53, Nº 13 (2019) |
Electron Mobility Calculation of Diluted III–V-Nitrides Alloys |
(Eng)
|
|
Chakir K., Bilel C., Rebey A.
|
| Volume 53, Nº 12 (2019) |
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs |
(Eng)
|
|
Lebedev A., Levinshtein M., Ivanov P., Kozlovski V., Strel’chuk A., Shabunina E., Fursin L.
|
| Volume 53, Nº 12 (2019) |
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures |
(Eng)
|
|
Muratov T.
|
| Volume 53, Nº 12 (2019) |
On the Characteristic Features of the Impurity Energy Spectrum in Arsenides |
(Eng)
|
|
Kamiliov I., Daunov M., Gajiev G., Arslanov R.
|
| Volume 53, Nº 12 (2019) |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
(Eng)
|
|
Singh A., Chandra D., Kattayat S., Kumar S., Alvi P., Rathi A.
|
| Volume 53, Nº 12 (2019) |
Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals |
(Eng)
|
|
Bodnar I., Chan B., Pavlovskii V., Svitsiankou I., Yablonskii G.
|
| Volume 53, Nº 11 (2019) |
Temperature Coefficient of Movement of the Resonance Level of Iron in Pb1 – x – ySnxFeyTe Alloys |
(Eng)
|
|
Skipetrov E., Kovalev B., Skipetrova L., Knotko A., Slynko V.
|
| Volume 53, Nº 10 (2019) |
Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid |
(Eng)
|
|
Alekseev P.
|
| Volume 53, Nº 10 (2019) |
Microwave Magnetic Absorption in HgSe with Co and Ni Impurities |
(Eng)
|
|
Veinger A., Kochman I., Frolov D., Okulov V., Govorkova T., Paranchich L.
|
| Volume 53, Nº 8 (2019) |
Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field |
(Eng)
|
|
Kamilov I., Stepurenko A., Gummetov A.
|
| Volume 53, Nº 8 (2019) |
Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals |
(Eng)
|
|
Avanesyan V., Piskovatskova I., Stozharov V.
|
| Volume 53, Nº 8 (2019) |
Some Physical Properties of the New Intermetallic Compound NbCd2 |
(Eng)
|
|
Tuleushev Y., Zhakanbaev E., Migunova A., Nicenko A., Volodin V.
|
| Volume 53, Nº 7 (2019) |
Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint |
(Eng)
|
|
Prokofieva L., Konstantinov P.
|
| Volume 53, Nº 7 (2019) |
Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium |
(Eng)
|
|
Yurasov D., Baidakova N., Drozdov M., Morozova E., Kalinnikov M., Novikov A.
|
| Volume 53, Nº 7 (2019) |
On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide |
(Eng)
|
|
Kazanin M., Kaminski V., Grevtsev M.
|
| Volume 53, Nº 6 (2019) |
Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory |
(Eng)
|
|
Morozova N., Miroshnikova I., Galstyan V.
|
| Volume 53, Nº 6 (2019) |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
(Eng)
|
|
Yarykin N., Shuman V., Portsel L., Lodygin A., Astrov Y., Abrosimov N., Weber J.
|
| Volume 53, Nº 5 (2019) |
On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes |
(Eng)
|
|
Davydov S.
|
| Volume 53, Nº 4 (2019) |
Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths |
(Eng)
|
|
Dmitriev A.
|
| Volume 53, Nº 3 (2019) |
Specific Features of the Electron Spin Resonance of an Iron Impurity in HgSe Crystals |
(Eng)
|
|
Veinger A., Kochman I., Okulov V., Govorkova T., Andriichuk M., Paranchich L.
|
| Volume 53, Nº 3 (2019) |
Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions |
(Eng)
|
|
Novikov G., Rabenok E., Orishina P., Gapanovich M., Odin I.
|
| Volume 53, Nº 2 (2019) |
Features of the Properties of Rare-Earth Semiconductors |
(Eng)
|
|
Kaminski V., Sharenkova N.
|
| Volume 53, Nº 2 (2019) |
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions |
(Eng)
|
|
Sobolev N., Aleksandrov O., Sakharov V., Serenkov I., Shek E., Kalyadin A., Parshin E., Melesov N.
|
| Volume 53, Nº 1 (2019) |
Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals |
(Eng)
|
|
Gladilin A., Ilichev N., Kalinushkin V., Studenikin M., Uvarov O., Chapnin V., Tumorin V., Novikov G.
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