| Issue |
Title |
File |
| Vol 52, No 12 (2018) |
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates |
(Eng)
|
|
Alekseev P.A., Dunaevskiy M.S., Mikhailov A.O., Lebedev S.P., Lebedev A.A., Ilkiv I.V., Khrebtov A.I., Bouravleuv A.D., Cirlin G.E.
|
| Vol 52, No 10 (2018) |
Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method |
(Eng)
|
|
Belolipetskiy A.V., Nestoklon M.O., Yassievich I.N.
|
| Vol 52, No 9 (2018) |
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |
(Eng)
|
|
Seredin P.V., Lenshin A.S., Fedyukin A.V., Goloshchapov D.L., Lukin A.N., Arsentyev I.N., Zhabotinsky A.V.
|
| Vol 52, No 9 (2018) |
Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions |
(Eng)
|
|
Orletskyi I.G., Ilashchuk M.I., Solovan M.N., Maryanchuk P.D., Parfenyuk O.A., Maistruk E.V., Nichyi S.V.
|
| Vol 52, No 9 (2018) |
On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films |
(Eng)
|
|
Volodin V.A., Rui Z., Krivyakin G.K., Antonenko A.K., Stoffel M., Rinnert H., Vergnat M.
|
| Vol 52, No 9 (2018) |
Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure |
(Eng)
|
|
Saidov A.S., Leyderman A.Y., Usmonov S.N., Amonov K.A.
|
| Vol 52, No 9 (2018) |
Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si |
(Eng)
|
|
Teplyakov M.P., Ken O.S., Goryachev D.N., Sreseli O.M.
|
| Vol 52, No 8 (2018) |
Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal |
(Eng)
|
|
Jafarova V.N., Orudzhev G.S., Huseynova S.S., Stempitsky V.R., Baranava M.S.
|
| Vol 52, No 8 (2018) |
Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation |
(Eng)
|
|
Elistratova M.A., Poloskin D.S., Goryachev D.N., Zakharova I.B., Sreseli O.M.
|
| Vol 52, No 8 (2018) |
On the Application of Silicate Glasses with CdSxSe1–x Semiconductor Nanocrystals as Optical Thermometers and Optical Filters with a Controlled Absorption Edge |
(Eng)
|
|
Petrosyan P.G., Grigoryan L.N., Musaelyan G.A.
|
| Vol 52, No 8 (2018) |
Degradation of the Photoluminescence of ZnTPP and ZnTPP–C60 Thin Films under Gamma Irradiation |
(Eng)
|
|
Romanov N.M., Elistratova M.A., Lahderanta E., Zakharova I.B.
|
| Vol 52, No 7 (2018) |
Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure |
(Eng)
|
|
Tregulov V.V., Litvinov V.G., Ermachikhin A.V.
|
| Vol 52, No 7 (2018) |
Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods |
(Eng)
|
|
Kurbanov S.S., Urolov S.Z., Shaymardanov Z.S., Cho H.D., Kang T.W.
|
| Vol 52, No 7 (2018) |
Modification of Photoconductivity Spectra in ZnO–CdSe Quantum- Dot Composites upon Exposure to Additional Photoexcitation |
(Eng)
|
|
Drozdov K.A., Krylov I.V., Chizhov A.S., Rumyantseva M.N., Ryabova L.I., Khokhlov D.R.
|
| Vol 52, No 7 (2018) |
Photoelectric Properties of ZnO Threadlike Crystals |
(Eng)
|
|
Shkumbatjuk P.S.
|
| Vol 52, No 7 (2018) |
Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K |
(Eng)
|
|
Kozyukhin S.A., Bedin S.A., Rudakovskaya P.G., Ivanova O.S., Ivanov V.K.
|
| Vol 52, No 6 (2018) |
Properties of Lead-Sulfide Nanoparticles in a Multicrystalline Structure |
(Eng)
|
|
Zhukov N.D., Rokakh A.G., Shishkin M.I.
|
| Vol 52, No 3 (2018) |
Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface |
(Eng)
|
|
Lenshin A.S.
|
| Vol 52, No 3 (2018) |
Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon |
(Eng)
|
|
Bilenko D.I., Belobrovaya O.Y., Terin D.V., Galushka V.V., Galushka I.V., Zharkova E.A., Polyanskaya V.P., Sidorov V.I., Yagudin I.T.
|
| Vol 52, No 2 (2018) |
Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates |
(Eng)
|
|
Stanchik A.V., Gremenok V.F., Bashkirov S.A., Tivanov M.S., Juškénas R.L., Novikov G.F., Giraitis R., Saad A.M.
|
| Vol 52, No 2 (2018) |
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |
(Eng)
|
|
Ratnikov V.V., Sheglov M.P., Ber B.Y., Kazantsev D.Y., Osinnykh I.V., Malin T.V., Zhuravlev K.S.
|
| Vol 52, No 1 (2018) |
Determination of Thermodynamic Parameters in the Cu1.95Ni0.05S Phase-Transition Regions |
(Eng)
|
|
Aliev F.F., Hasanov H.A., Rzaeva A.G., Jafarov M.B., Damirov G.M.
|
| Vol 52, No 1 (2018) |
Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure |
(Eng)
|
|
Zhukov N.D., Kabanov V.F., Mihaylov A.I., Mosiyash D.S., Pereverzev Y.E., Hazanov A.A., Shishkin M.I.
|
| Vol 52, No 1 (2018) |
X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide |
(Eng)
|
|
Boiko M.E., Sharkov M.D., Karlina L.B., Boiko A.M., Konnikov S.G.
|
| Vol 51, No 10 (2017) |
X-ray photoelectron spectroscopy studies of ZnSxSe1–x nanostructures produced in a porous aluminum-oxide matrix |
(Eng)
|
|
Chukavin A.I., Valeev R.G., Beltiukov A.N.
|
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