| Edição |
Título |
Arquivo |
| Volume 52, Nº 12 (2018) |
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates |
(Eng)
|
|
Alekseev P., Dunaevskiy M., Mikhailov A., Lebedev S., Lebedev A., Ilkiv I., Khrebtov A., Bouravleuv A., Cirlin G.
|
| Volume 52, Nº 10 (2018) |
Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method |
(Eng)
|
|
Belolipetskiy A., Nestoklon M., Yassievich I.
|
| Volume 52, Nº 9 (2018) |
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |
(Eng)
|
|
Seredin P., Lenshin A., Fedyukin A., Goloshchapov D., Lukin A., Arsentyev I., Zhabotinsky A.
|
| Volume 52, Nº 9 (2018) |
Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions |
(Eng)
|
|
Orletskyi I., Ilashchuk M., Solovan M., Maryanchuk P., Parfenyuk O., Maistruk E., Nichyi S.
|
| Volume 52, Nº 9 (2018) |
On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films |
(Eng)
|
|
Volodin V., Rui Z., Krivyakin G., Antonenko A., Stoffel M., Rinnert H., Vergnat M.
|
| Volume 52, Nº 9 (2018) |
Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure |
(Eng)
|
|
Saidov A., Leyderman A., Usmonov S., Amonov K.
|
| Volume 52, Nº 9 (2018) |
Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si |
(Eng)
|
|
Teplyakov M., Ken O., Goryachev D., Sreseli O.
|
| Volume 52, Nº 8 (2018) |
Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal |
(Eng)
|
|
Jafarova V., Orudzhev G., Huseynova S., Stempitsky V., Baranava M.
|
| Volume 52, Nº 8 (2018) |
Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation |
(Eng)
|
|
Elistratova M., Poloskin D., Goryachev D., Zakharova I., Sreseli O.
|
| Volume 52, Nº 8 (2018) |
On the Application of Silicate Glasses with CdSxSe1–x Semiconductor Nanocrystals as Optical Thermometers and Optical Filters with a Controlled Absorption Edge |
(Eng)
|
|
Petrosyan P., Grigoryan L., Musaelyan G.
|
| Volume 52, Nº 8 (2018) |
Degradation of the Photoluminescence of ZnTPP and ZnTPP–C60 Thin Films under Gamma Irradiation |
(Eng)
|
|
Romanov N., Elistratova M., Lahderanta E., Zakharova I.
|
| Volume 52, Nº 7 (2018) |
Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods |
(Eng)
|
|
Kurbanov S., Urolov S., Shaymardanov Z., Cho H., Kang T.
|
| Volume 52, Nº 7 (2018) |
Modification of Photoconductivity Spectra in ZnO–CdSe Quantum- Dot Composites upon Exposure to Additional Photoexcitation |
(Eng)
|
|
Drozdov K., Krylov I., Chizhov A., Rumyantseva M., Ryabova L., Khokhlov D.
|
| Volume 52, Nº 7 (2018) |
Photoelectric Properties of ZnO Threadlike Crystals |
(Eng)
|
|
Shkumbatjuk P.
|
| Volume 52, Nº 7 (2018) |
Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K |
(Eng)
|
|
Kozyukhin S., Bedin S., Rudakovskaya P., Ivanova O., Ivanov V.
|
| Volume 52, Nº 7 (2018) |
Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure |
(Eng)
|
|
Tregulov V., Litvinov V., Ermachikhin A.
|
| Volume 52, Nº 6 (2018) |
Properties of Lead-Sulfide Nanoparticles in a Multicrystalline Structure |
(Eng)
|
|
Zhukov N., Rokakh A., Shishkin M.
|
| Volume 52, Nº 3 (2018) |
Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface |
(Eng)
|
|
Lenshin A.
|
| Volume 52, Nº 3 (2018) |
Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon |
(Eng)
|
|
Bilenko D., Belobrovaya O., Terin D., Galushka V., Galushka I., Zharkova E., Polyanskaya V., Sidorov V., Yagudin I.
|
| Volume 52, Nº 2 (2018) |
Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates |
(Eng)
|
|
Stanchik A., Gremenok V., Bashkirov S., Tivanov M., Juškénas R., Novikov G., Giraitis R., Saad A.
|
| Volume 52, Nº 2 (2018) |
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |
(Eng)
|
|
Ratnikov V., Sheglov M., Ber B., Kazantsev D., Osinnykh I., Malin T., Zhuravlev K.
|
| Volume 52, Nº 1 (2018) |
Determination of Thermodynamic Parameters in the Cu1.95Ni0.05S Phase-Transition Regions |
(Eng)
|
|
Aliev F., Hasanov H., Rzaeva A., Jafarov M., Damirov G.
|
| Volume 52, Nº 1 (2018) |
Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure |
(Eng)
|
|
Zhukov N., Kabanov V., Mihaylov A., Mosiyash D., Pereverzev Y., Hazanov A., Shishkin M.
|
| Volume 52, Nº 1 (2018) |
X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide |
(Eng)
|
|
Boiko M., Sharkov M., Karlina L., Boiko A., Konnikov S.
|
| Volume 51, Nº 10 (2017) |
X-ray photoelectron spectroscopy studies of ZnSxSe1–x nanostructures produced in a porous aluminum-oxide matrix |
(Eng)
|
|
Chukavin A., Valeev R., Beltiukov A.
|
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