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卷 50, 编号 5 (2016)
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
Egorov A., Karachinsky L., Novikov I., Babichev A., Nevedomskiy V., Bugrov V.
PDF
(Eng)
卷 50, 编号 3 (2016)
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Tarasova E., Khananova A., Obolensky S., Zemlyakov V., Sveshnikov Y., Egorkin V., Ivanov V., Medvedev G., Smotrin D.
PDF
(Eng)
卷 53, 编号 16 (2019)
Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
Spirina A., Neizvestny I., Shwartz N.
PDF
(Eng)
卷 53, 编号 10 (2019)
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction
Vostokov N., Daniltsev V., Kraev S., Krukov V., Skorokhodov E., Strelchenko S., Shashkin V.
PDF
(Eng)
卷 52, 编号 10 (2018)
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
Maximov M., Nadtochiy A., Shernyakov Y., Payusov A., Vasil’ev A., Ustinov V., Serin A., Gordeev N., Zhukov A.
PDF
(Eng)
卷 50, 编号 2 (2016)
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds
Gromov D., Maltsev P., Polevich S.
PDF
(Eng)
卷 53, 编号 16 (2019)
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
Prasolov N., Ermakov I., Gutkin A., Solov’ev V., Dorogin L., Konnikov S., Brunkov P.
PDF
(Eng)
卷 53, 编号 9 (2019)
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A., Pavlov D., Shengurov V., Denisov S., Chalkov V., Baidus N., Rykov A., Kryukov R.
PDF
(Eng)
卷 50, 编号 2 (2016)
GaAs structures with a gate dielectric based on aluminum-oxide layers
Kalentyeva I., Vikhrova O., Zdoroveyshchev A., Danilov Y., Kudrin A.
PDF
(Eng)
卷 53, 编号 16 (2019)
Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires
Berdnikov Y., Sibirev N., Koryakin A.
PDF
(Eng)
卷 53, 编号 8 (2019)
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Kruglov A., Reunov D.
PDF
(Eng)
卷 52, 编号 9 (2018)
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures
Orlov M., Volkova N., Ivina N., Orlov L.
PDF
(Eng)
卷 50, 编号 4 (2016)
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
Mintairov S., Emelyanov V., Rybalchenko D., Salii R., Timoshina N., Shvarts M., Kalyuzhnyy N.
PDF
(Eng)
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