卷 51, 编号 12 (2017)

The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting p-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.

Dependences of the etch rates for KOH and HF:H₂O₂:CH₃COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve as a mask for selective etching of Si in a mixture of an aqueous solution of KOH with isopropyl alcohol, followed by the islands removal from the surface by the selective etching in HF:H₂O₂:CH₃COOH. It was demonstrated experimentally that such approach allows to produce the submicron relief on a silicon surface, which leads to the significant decrease of the reflectivity in a wide spectral range. It is believed that the proposed method of surface relief formation can be used to improve the efficiency of the thin-film solar cells based on the crystalline silicon.

The segregation of Sb in Si layers grown by molecular beam epitaxy on Si substrates with the (111), (110), and (115) crystallographic orientations is studied; the results obtained for these orientations are compared with those obtained for the most widely used orientation (001). It is found that there is a qualitative similarity between the temperature dependences of the Sb segregation ratio (r) for all studied orientations; in particular, it is possible to separate two characteristic temperature ranges corresponding to the kinetically limited and equilibrium regimes of segregation. However, quantitatively, the values of r for the orientations under study differ significantly from those for the Si(001) case at the same temperatures. For all orientations, narrow temperature ranges within which the values of r vary by nearly five orders of magnitude are revealed for all dependences of r on the growth temperature. This finding allows us to adopt the method of selective doping, which was for the first time suggested by us for structures grown on Si (001) and is based on the controlled use of the segregation effect, to structures grown on Si substrates with an orientation different from (001). Using this method, selectively doped Si:Sb/Si(111) structures are fabricated; in these structures, a variation in the Sb concentration by an order of magnitude occurs at the scale of several nanometers.

Shubnikov-de Haas oscillations are studied in 8-nm-wide HgTe/CdHgTe quantum wells with an electron concentration of (1.7–13) × 10¹¹ cm^–2 in the temperature range from 1.6 to 40 K. The gaps between Landau levels and the quantum relaxation time are determined from the temperature dependence of the oscillation amplitude at integer filling factors. The experimental gap values are found to be in good agreement with the results of the single-particle calculation of the level energies using the 8-band Kane model. The experimental widths of the density of states are indicative of profound screening of the exchange interaction in HgTe/CdHgTe quantum wells.

The problem of radiation-produced defects in n-Ge before and after n → p conversion is discussed in the light of electrical data obtained by means of Hall effect measurements as well as Deep Level Transient Spectroscopy. The picture of the dominant radiation defects in irradiated n-Ge before n → p conversion appears to be complicated, since they turn out to be neutral in n-type material and unobserved in the electrical measurements. It is argued that radiation-produced acceptors at ≈E_C – 0.2 eV previously ascribed to vacancy-donor pairs (E-centers) play a minor role in the defect formation processes under irradiation. Acceptor defects at ≈E_V + 0.1 eV are absolutely dominating in irradiated n-Ge after n → p conversion. All the radiation defects under consideration were found to be dependent on the chemical group-V impurities. Together with this, they are concluded to be vacancy-related, as evidenced positron annihilation experiments. A detailed consideration of experimental data on irradiated n-Ge shows that the present model of radiation-produced defects adopted in literature should be reconsidered.

Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths.

Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly.

The thin film of Sb₂Se₃ was deposited by thermal evaporation method and the film was annealed in N₂ flow in a three zone furnace at a temperature of 290°С for 30 min. The structural properties were characterized by scanning electron microscopy (SEM), transmission electron microscopy (ТЕМ), X-ray diffraction (XRD) and Raman spectroscopy, respectively. It is seen that the as-deposited film is amorphous and the annealed film is polycrystalline in nature. The surface of Sb₂Se₃ film is oxidized with a thickness of 1.15 nm investigated by X-ray photolecetron spectroscopy (XPS) measurement. Spectroscopic ellipsometry (SE) and UV–vis spectroscopy measurements were carried out to study the optical properties of Sb₂Se₃ film. In addition, the first principles calculations were applied to study the electronic and optical properties of Sb₂Se₃. From the theoretical calculation it is seen that Sb₂Se₃ is intrinsically an indirect band gap semiconductor. Importantly, the experimental band gap is in good agreement with the theoretical band gap. Furthermore, the experimental values of n, k, ε₁, and ε₂ are much closer to the theoretical results. However, the obtained large dielectric constants and refractive index values suggest that exciton binding energy in Sb₂Se₃ should be relatively small and an antireflective coating is recommended to enhance the light absorption of Sb₂Se₃ for thin film solar cells application.

In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal–lnsulator–Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al₂O₃/Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi–Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C–V), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device.

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I–V), capacitance-voltage (C–V), capacitance-frequency (C–f) and conductance-frequency (G–f) measurements. The obtained mean barrier height and ideality factor from I–V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C–V measurements and the corresponding values are 0.62 V, 1.20 × 1017 cm^–3 and 0.79 eV, respectively. The interface state density (N_SS) obtained from forward bias I–V characteristics by considering the series resistance (R_S) values are lower without considering the series resistance (R_S). Furthermore, the interface state density (N_SS) and relaxation time (τ) are also calculated from the experimental C–f and G–f measurements. The N_SS values obtained from the I–V characteristics are almost three orders higher than the N_SS values obtained from the C–f and G–f measurements. The experimental results depict that N_SS and τ are decreased with bias voltage. The frequency dependence of the series resistance (R_S) is attributed to the particular distribution density of interface states.

In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si–QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy–level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I–V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined.

Compact handheld devices which were a dream in the past are now a reality; this has been enabled by miniaturization of circuit architectures including power devices. Scaling down of the design feature sizes does come with a price with an increase in systematic defects during chip manufacturing. There are generally two methods of inline defect detection adopted to monitor the semiconductor device fabrication—optical inspection and electron beam inspection. The optical inspection uses ultra-violet and deep ultra-violet (UV/DUV) light to find patterning defects on the wafer. While the electron-beam inspection uses electron charge and discharge measurement to find electrical connection defects, both are a costly procedure in terms of resources and time. The physical limit of feature resolution of the optical source is now making the defect inspection job difficult in miniaturized application specific integrated circuit (ASIC). This study is designed to test the patterning optimization approach on both inspection platforms. Using hotspot analysis weak locations are identified in the full chip design, and then they are verified in the inline wafer inspection. The criterion for hot-spot determination is also discussed in this paper.