| Выпуск |
Название |
Файл |
| Том 52, № 11 (2018) |
Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices |
|
|
Pavelyev D., Vasilev A., Kozlov V., Obolenskaya E.
|
| Том 50, № 6 (2016) |
Radiation-induced bistable centers with deep levels in silicon n+–p structures |
|
|
Lastovskii S., Markevich V., Yakushevich H., Murin L., Krylov V.
|
| Том 52, № 13 (2018) |
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles |
|
|
Strel’chuk A., Kozlovski V., Lebedev A.
|
| Том 51, № 12 (2017) |
Radiation-produced defects in germanium: Experimental data and models of defects |
|
|
Emtsev V., Kozlovski V., Poloskin D., Oganesyan G.
|
| Том 50, № 5 (2016) |
Radiation-stimulated processes in transistor temperature sensors |
|
|
Pavlyk B., Grypa A.
|
| Том 51, № 3 (2017) |
Radiative d–d transitions at tungsten centers in II–VI semiconductors |
|
|
Ushakov V., Krivobok V., Pruchkina A.
|
| Том 52, № 7 (2018) |
Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion |
|
|
Ishchenko D., Neizvestny I.
|
| Том 53, № 11 (2019) |
Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds |
|
|
Breev I., Anisimov A., Wolfson A., Kazarova O., Mokhov E.
|
| Том 51, № 2 (2017) |
Raman scattering in InP doped by Be+-ion implantation |
|
|
Avakyants L., Bokov P., Chervyakov A.
|
| Том 53, № 4 (2019) |
Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films |
|
|
Tyschenko I., Volodin V., Popov V.
|
| Том 52, № 9 (2018) |
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method |
|
|
Anisimov A., Wolfson A., Mokhov E.
|
| Том 52, № 6 (2018) |
Rb1 – xCsxNO3 (x = 0.025, 0.05, 0.1) Single Crystals and Their High-Temperature X-Ray Study |
|
|
Haziyeva A., Nasirov V., Asadov Y., Aliyev Y., Jabarov S.
|
| Том 52, № 10 (2018) |
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities |
|
|
Mintairov M., Evstropov V., Mintairov S., Salii R., Shvarts M., Kalyuzhnyy N.
|
| Том 53, № 12 (2019) |
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures |
|
|
Muratov T.
|
| Том 53, № 14 (2019) |
Record Low Threshold Current Density in Quantum Dot Microdisk Laser |
|
|
Moiseev E., Kryzhanovskaya N., Zubov F., Mikhailovskii M., Abramov A., Maximov M., Kulagina M., Guseva Y., Livshits D., Zhukov A.
|
| Том 52, № 4 (2018) |
Red Single-Photon Emission from InAs/AlGaAs Quantum Dots |
|
|
Rakhlin M., Belyaev K., Klimko G., Mukhin I., Ivanov S., Toropov A.
|
| Том 52, № 13 (2018) |
Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films |
|
|
Feklistov K., Cherkov A., Popov V., Fedina L.
|
| Том 52, № 11 (2018) |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
|
|
Zhukov A., Gordeev N., Shernyakov Y., Payusov A., Serin A., Kulagina M., Mintairov S., Kalyuzhnyy N., Maximov M.
|
| Том 50, № 10 (2016) |
Reflectance of a PbSb2Te4 crystal in a wide spectral range |
|
|
Nemov S., Ulashkevich Y., Povolotskii A., Khlamov I.
|
| Том 51, № 10 (2017) |
Reflectance spectra of p-Bi2Te3:Sn crystals in a wide IR region |
|
|
Nemov S., Ulashkevich Y., Allahkhah A.
|
| Том 52, № 16 (2018) |
Reflectometry of X-ray Whispering Gallery Waves Propagating along Liquid Meniscuses |
|
|
Goray L., Asadchikov V., Roshchin B., Volkov Y., Tikhonov A.
|
| Том 52, № 12 (2018) |
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |
|
|
Gorshkov A., Volkova N., Pavlov D., Usov Y., Istomin L., Levichev S.
|
| Том 53, № 11 (2019) |
Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time |
|
|
Ageeva N., Bronevoi I., Zabegaev D., Krivonosov A.
|
| Том 50, № 9 (2016) |
Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures |
|
|
Kalygina V., Egorova I., Novikov V., Prudaev I., Tolbanov O.
|
| Том 50, № 4 (2016) |
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons |
|
|
Kumekov S., Mustafin A., Mussatay S.
|
| 1076 - 1100 из 1443 результатов |
<< < 39 40 41 42 43 44 45 46 47 48 > >> |
