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Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface
Mikoushkin V.M., Solonitsyna A.P., Makarevskaya E.A., Novikov D.A.
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Sokolova Z.N., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S., Asryan L.V.
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons
Kumekov S.E., Mustafin A.T., Mussatay S.S.
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface
Bakulin A.V., Kulkova S.E.
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells
Dikareva N.V., Zvonkov B.N., Samartsev I.V., Nekorkin S.M., Baidus N.V., Dubinov A.A.
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
Alekseev P.A., Dunaevskiy M.S., Mikhailov A.O., Lebedev S.P., Lebedev A.A., Ilkiv I.V., Khrebtov A.I., Bouravleuv A.D., Cirlin G.E.
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I.
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.I.
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates
Seredin P.V., Fedyukin A.V., Terekhov V.A., Barkov K.A., Arsentyev I.N., Bondarev A.D., Fomin E.V., Pikhtin N.A.
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
Samartsev I.V., Nekorkin S.M., Zvonkov B.N., Aleshkin V.Y., Dubinov A.A., Pashenkin I.J., Dikareva N.V., Chigineva A.B.
GaAs/InGaAsN heterostructures for multi-junction solar cells
Nikitina E.V., Gudovskikh A.S., Lazarenko A.A., Pirogov E.V., Sobolev M.S., Zelentsov K.S., Morozov I.A., Egorov A.Y.
Microdisk Injection Lasers for the 1.27-μm Spectral Range
Kryzhanovskaya N.V., Maximov M.V., Blokhin S.A., Bobrov M.A., Kulagina M.M., Troshkov S.I., Zadiranov Y.M., Lipovskii A.A., Moiseev E.I., Kudashova Y.V., Livshits D.A., Ustinov V.M., Zhukov A.E.
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