| Issue |
Section |
Title |
File |
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InGaN/GaN light-emitting diode microwires of submillimeter length |
|
| Vol 52, No 7 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy |
|
| Vol 53, No 7 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Properties of Semipolar GaN Grown on a Si(100) Substrate |
|
| Vol 53, No 16 (2019) |
Nanostructures Technology |
Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB |
|
| Vol 53, No 16 (2019) |
Nanostructures Technology |
Selective Epitaxy of Submicron GaN Structures |
|
| Vol 53, No 16 (2019) |
Nanostructures Technology |
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |
|
