| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm |
|
| 卷 51, 编号 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
|
| 卷 51, 编号 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission |
|
| 卷 52, 编号 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range |
|
| 卷 52, 编号 9 (2018) |
Physics of Semiconductor Devices |
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells |
|
| 卷 52, 编号 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers |
|
| 卷 52, 编号 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature |
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