| Issue |
Section |
Title |
File |
| Vol 50, No 2 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters |
|
| Vol 50, No 7 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium |
|
| Vol 50, No 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types |
|
| Vol 51, No 2 (2017) |
Surfaces, Interfaces, and Thin Films |
Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes |
|
| Vol 51, No 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties |
|
| Vol 51, No 9 (2017) |
Electronic Properties of Semiconductors |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties |
|
| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
|
| Vol 52, No 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |
|
| Vol 52, No 13 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
|
| Vol 53, No 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology |
|
| Vol 53, No 7 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy |
|
| Vol 53, No 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate |
|
| Vol 53, No 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates |
|
