| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 2 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters |
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| Том 50, № 2 (2016) |
Physics of Semiconductor Devices |
Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon |
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| Том 50, № 4 (2016) |
Physics of Semiconductor Devices |
On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) with time-modulated dc magnetron plasma |
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| Том 50, № 5 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Lifetime of excitons localized in Si nanocrystals in amorphous silicon |
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| Том 50, № 7 (2016) |
Electronic Properties of Semiconductors |
Electron exchange between tin impurity U– centers in PbSzSe1–z alloys |
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| Том 50, № 8 (2016) |
Surfaces, Interfaces, and Thin Films |
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma |
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| Том 50, № 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells |
|
| Том 51, № 1 (2017) |
Electronic Properties of Semiconductors |
Investigations of CuFeS2 semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field |
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| Том 51, № 4 (2017) |
Amorphous, Vitreous, and Organic Semiconductors |
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide |
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| Том 51, № 9 (2017) |
Physics of Semiconductor Devices |
Degradation of micromorphous thin-film silicon (α-Si/μc-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring |
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| Том 52, № 2 (2018) |
Spectroscopy, Interaction with Radiation |
Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films |
|
| Том 52, № 6 (2018) |
Electronic Properties of Semiconductors |
On the Structure of the Mössbauer Spectra of 119mSn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of 119mTe/119Sb Isotopes |
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| Том 52, № 7 (2018) |
Physics of Semiconductor Devices |
Study of Deep Levels in a HIT Solar Cell |
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| Том 52, № 7 (2018) |
Physics of Semiconductor Devices |
Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers |
|
| Том 52, № 8 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Features of 63,65Cu NMR Spectra in the Local Field of Samples of CuFeS2 Semiconductor Mineral from Oceanic Sulfide Deposits |
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| Том 52, № 10 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) |
|
| Том 52, № 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters |
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| Том 53, № 5 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses |
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| Том 53, № 8 (2019) |
Physics of Semiconductor Devices |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
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| Том 53, № 11 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (\({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %) |
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