| Шығарылым |
Атауы |
Файл |
| Том 50, № 5 (2016) |
Radiation-stimulated processes in transistor temperature sensors |
(Eng)
|
|
Pavlyk B., Grypa A.
|
| Том 50, № 4 (2016) |
Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se2 thin-film solar cells |
(Eng)
|
|
Kosyachenko L., Lytvynenko V., Maslyanchuk O.
|
| Том 50, № 4 (2016) |
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates |
(Eng)
|
|
Mintairov S., Emelyanov V., Rybalchenko D., Salii R., Timoshina N., Shvarts M., Kalyuzhnyy N.
|
| Том 50, № 4 (2016) |
Simulation of the real efficiencies of high-efficiency silicon solar cells |
(Eng)
|
|
Sachenko A., Skrebtii A., Korkishko R., Kostylyov V., Kulish N., Sokolovskyi I.
|
| Том 50, № 4 (2016) |
On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) with time-modulated dc magnetron plasma |
(Eng)
|
|
Undalov Y., Terukov E., Gusev O., Trapeznikova I.
|
| Том 50, № 3 (2016) |
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base |
(Eng)
|
|
Levinshtein M., Mnatsakanov T., Yurkov S., Tandoev A., Ryu S., Palmour J.
|
| Том 50, № 3 (2016) |
Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT |
(Eng)
|
|
Swain R., Jena K., Lenka T.
|
| Том 50, № 3 (2016) |
Microdisk Injection Lasers for the 1.27-μm Spectral Range |
(Eng)
|
|
Kryzhanovskaya N., Maximov M., Blokhin S., Bobrov M., Kulagina M., Troshkov S., Zadiranov Y., Lipovskii A., Moiseev E., Kudashova Y., Livshits D., Ustinov V., Zhukov A.
|
| Том 50, № 3 (2016) |
High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time |
(Eng)
|
|
Gusev A., Lyubutin S., Rukin S., Tsyranov S.
|
| Том 50, № 2 (2016) |
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds |
(Eng)
|
|
Gromov D., Maltsev P., Polevich S.
|
| Том 50, № 2 (2016) |
Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm |
(Eng)
|
|
Pashkeev D., Selivanov Y., Chizhevskii E., Zasavitskiy I.
|
| Том 50, № 2 (2016) |
Field-effect transistor with 2D carrier systems in the gate and channel |
(Eng)
|
|
Popov V.
|
| Том 50, № 2 (2016) |
Si:Si LEDs with room-temperature dislocation-related luminescence |
(Eng)
|
|
Sobolev N., Kalyadin A., Konovalov M., Aruev P., Zabrodskiy V., Shek E., Shtel’makh K., Mikhaylov A., Tetel’baum D.
|
| Том 50, № 2 (2016) |
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation |
(Eng)
|
|
Tikhomirov V., Zemlyakov V., Volkov V., Parnes Y., Vyuginov V., Lundin W., Sakharov A., Zavarin E., Tsatsulnikov A., Cherkashin N., Mizerov M., Ustinov V.
|
| Том 50, № 2 (2016) |
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties |
(Eng)
|
|
Kalyadin A., Sobolev N., Strel’chuk A., Aruev P., Zabrodskiy V., Shek E.
|
| Том 50, № 2 (2016) |
Electroluminescence properties of LEDs based on electron-irradiated p-Si |
(Eng)
|
|
Sobolev N., Shtel’makh K., Kalyadin A., Aruev P., Zabrodskiy V., Shek E., Yang D.
|
| Том 50, № 2 (2016) |
Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon |
(Eng)
|
|
Kryuchenko Y., Kostylyov V., Sokolovskyi I., Abramov A., Bobyl A., Panaiotti I., Terukov E., Sachenko A.
|
| Том 50, № 1 (2016) |
Photodetectors based on CuInS2 |
(Eng)
|
|
Vostretsova L., Gavrilov S., Bulyarsky S.
|
| Том 50, № 1 (2016) |
Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals |
(Eng)
|
|
Korsunska N., Shulga E., Stara T., Litvin P., Bondarenko V.
|
| Том 50, № 1 (2016) |
Organic light-emitting diodes based on a series of new polythienothiophene complexes and highly luminescent quantum dots |
(Eng)
|
|
Vashchenko A., Goriachiy D., Vitukhnovsky A., Tananaev P., Vasnev V., Rodlovskaya E.
|
| Том 50, № 1 (2016) |
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm |
(Eng)
|
|
Emelyanov V., Mintairov S., Sorokina S., Khvostikov V., Shvarts M.
|
| Том 50, № 1 (2016) |
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters |
(Eng)
|
|
Emelyanov V., Sorokina S., Khvostikov V., Shvarts M.
|
| Том 50, № 1 (2016) |
Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide |
(Eng)
|
|
Mikhaylov A., Afanasyev A., Ilyin V., Luchinin V., Sledziewski T., Reshanov S., Schöner A., Krieger M.
|
| Нәтижелер 198 - 176/198 |
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