| Issue |
Title |
File |
| Vol 50, No 5 (2016) |
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure |
(Eng)
|
|
Il’inskaya N.D., Karandashev S.A., Karpukhina N.G., Lavrov A.A., Matveev B.A., Remennyi M.A., Stus N.M., Usikova A.A.
|
| Vol 50, No 4 (2016) |
Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se2 thin-film solar cells |
(Eng)
|
|
Kosyachenko L.A., Lytvynenko V.Y., Maslyanchuk O.L.
|
| Vol 50, No 4 (2016) |
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates |
(Eng)
|
|
Mintairov S.A., Emelyanov V.M., Rybalchenko D.V., Salii R.A., Timoshina N.K., Shvarts M.Z., Kalyuzhnyy N.A.
|
| Vol 50, No 4 (2016) |
Simulation of the real efficiencies of high-efficiency silicon solar cells |
(Eng)
|
|
Sachenko A.V., Skrebtii A.I., Korkishko R.M., Kostylyov V.P., Kulish N.R., Sokolovskyi I.O.
|
| Vol 50, No 4 (2016) |
On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) with time-modulated dc magnetron plasma |
(Eng)
|
|
Undalov Y.K., Terukov E.I., Gusev O.B., Trapeznikova I.N.
|
| Vol 50, No 3 (2016) |
Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT |
(Eng)
|
|
Swain R., Jena K., Lenka T.R.
|
| Vol 50, No 3 (2016) |
Microdisk Injection Lasers for the 1.27-μm Spectral Range |
(Eng)
|
|
Kryzhanovskaya N.V., Maximov M.V., Blokhin S.A., Bobrov M.A., Kulagina M.M., Troshkov S.I., Zadiranov Y.M., Lipovskii A.A., Moiseev E.I., Kudashova Y.V., Livshits D.A., Ustinov V.M., Zhukov A.E.
|
| Vol 50, No 3 (2016) |
High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time |
(Eng)
|
|
Gusev A.I., Lyubutin S.K., Rukin S.N., Tsyranov S.N.
|
| Vol 50, No 3 (2016) |
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base |
(Eng)
|
|
Levinshtein M.E., Mnatsakanov T.T., Yurkov S.N., Tandoev A.G., Ryu S., Palmour J.W.
|
| Vol 50, No 2 (2016) |
Si:Si LEDs with room-temperature dislocation-related luminescence |
(Eng)
|
|
Sobolev N.A., Kalyadin A.E., Konovalov M.V., Aruev P.N., Zabrodskiy V.V., Shek E.I., Shtel’makh K.F., Mikhaylov A.N., Tetel’baum D.I.
|
| Vol 50, No 2 (2016) |
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation |
(Eng)
|
|
Tikhomirov V.G., Zemlyakov V.E., Volkov V.V., Parnes Y.M., Vyuginov V.N., Lundin W.V., Sakharov A.V., Zavarin E.E., Tsatsulnikov A.F., Cherkashin N.A., Mizerov M.N., Ustinov V.M.
|
| Vol 50, No 2 (2016) |
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties |
(Eng)
|
|
Kalyadin A.E., Sobolev N.A., Strel’chuk A.M., Aruev P.N., Zabrodskiy V.V., Shek E.I.
|
| Vol 50, No 2 (2016) |
Electroluminescence properties of LEDs based on electron-irradiated p-Si |
(Eng)
|
|
Sobolev N.A., Shtel’makh K.F., Kalyadin A.E., Aruev P.N., Zabrodskiy V.V., Shek E.I., Yang D.
|
| Vol 50, No 2 (2016) |
Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon |
(Eng)
|
|
Kryuchenko Y.V., Kostylyov V.P., Sokolovskyi I.O., Abramov A.S., Bobyl A.V., Panaiotti I.E., Terukov E.I., Sachenko A.V.
|
| Vol 50, No 2 (2016) |
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds |
(Eng)
|
|
Gromov D.V., Maltsev P.P., Polevich S.A.
|
| Vol 50, No 2 (2016) |
Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm |
(Eng)
|
|
Pashkeev D.A., Selivanov Y.G., Chizhevskii E.G., Zasavitskiy I.I.
|
| Vol 50, No 2 (2016) |
Field-effect transistor with 2D carrier systems in the gate and channel |
(Eng)
|
|
Popov V.G.
|
| Vol 50, No 1 (2016) |
Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide |
(Eng)
|
|
Mikhaylov A.I., Afanasyev A.V., Ilyin V.A., Luchinin V.V., Sledziewski T., Reshanov S.A., Schöner A., Krieger M.
|
| Vol 50, No 1 (2016) |
Photodetectors based on CuInS2 |
(Eng)
|
|
Vostretsova L.N., Gavrilov S.A., Bulyarsky S.V.
|
| Vol 50, No 1 (2016) |
Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals |
(Eng)
|
|
Korsunska N.E., Shulga E.P., Stara T.R., Litvin P.M., Bondarenko V.A.
|
| Vol 50, No 1 (2016) |
Organic light-emitting diodes based on a series of new polythienothiophene complexes and highly luminescent quantum dots |
(Eng)
|
|
Vashchenko A.A., Goriachiy D.O., Vitukhnovsky A.G., Tananaev P.N., Vasnev V.A., Rodlovskaya E.N.
|
| Vol 50, No 1 (2016) |
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm |
(Eng)
|
|
Emelyanov V.M., Mintairov S.A., Sorokina S.V., Khvostikov V.P., Shvarts M.Z.
|
| Vol 50, No 1 (2016) |
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters |
(Eng)
|
|
Emelyanov V.M., Sorokina S.V., Khvostikov V.P., Shvarts M.Z.
|
| 176 - 198 of 198 Items |
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