Issue |
Title |
File |
Vol 50, No 6 (2016) |
Matrix-type effect on the magnetotransport properties of Ni–AlO and Ni–NbO composite systems |
(Eng)
|
Stognei O.V., Maliki A.J., Grebennikov A.A., Semenenko K.I., Bulovatskaya E.O., Sitnikov A.V.
|
Vol 50, No 6 (2016) |
Optical properties of In2Se3 thin films |
(Eng)
|
Bodnar I.V.
|
Vol 50, No 6 (2016) |
Anomalous thermoelectric power in Hg3In2Te6 crystals |
(Eng)
|
Grushka O.G.
|
Vol 50, No 6 (2016) |
Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga) |
(Eng)
|
Poklonski N.A., Vyrko S.A., Poklonskaya O.N., Zabrodskii A.G.
|
Vol 50, No 6 (2016) |
Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment |
(Eng)
|
Gaidar G.P., Baranskii P.I.
|
Vol 50, No 6 (2016) |
On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation |
(Eng)
|
Prokofieva L.V., Konstantinov P.P., Shabaldin A.A.
|
Vol 50, No 6 (2016) |
Radiation-induced bistable centers with deep levels in silicon n+–p structures |
(Eng)
|
Lastovskii S.B., Markevich V.P., Yakushevich H.S., Murin L.I., Krylov V.P.
|
Vol 50, No 5 (2016) |
Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals |
(Eng)
|
Sobolev V.V., Perevoshchikov D.A.
|
Vol 50, No 5 (2016) |
X-ray conductivity of ZnSe single crystals |
(Eng)
|
Degoda V.Y., Podust G.P.
|
Vol 50, No 4 (2016) |
On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region |
(Eng)
|
Inglizian P.N., Mikheyev V.K., Novinkov V.V., Shchedrov E.R.
|
Vol 50, No 4 (2016) |
Features of photoinduced magnetism in some yttrium–iron-garnet single crystals |
(Eng)
|
Vorob’eva N.V., Mityukhlyaev V.B.
|
Vol 50, No 4 (2016) |
Electronic structure of Pt-substituted clathrate silicides Ba8PtxSi46–x(x = 4–6) |
(Eng)
|
Borshch N.A.
|
Vol 50, No 4 (2016) |
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides |
(Eng)
|
Borisenko S.I.
|
Vol 50, No 4 (2016) |
Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment |
(Eng)
|
Nikitenko V.R., Amrakulov M.M., Khan M.D.
|
Vol 50, No 4 (2016) |
Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation |
(Eng)
|
Akimov A.N., Klimov A.E., Neizvestny I.G., Shumsky V.N., Epov V.S.
|
Vol 50, No 3 (2016) |
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC |
(Eng)
|
Kyuregyan A.S.
|
Vol 50, No 3 (2016) |
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well |
(Eng)
|
Hasanov K.A., Huseynov J.I., Dadashova V.V., Aliyev F.F.
|
Vol 50, No 3 (2016) |
A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors |
(Eng)
|
Poklonski N.A., Vyrko S.A., Kovalev A.I., Zabrodskii A.G.
|
Vol 50, No 2 (2016) |
On the theory of the two-photon linear photovoltaic effect in n-GaP |
(Eng)
|
Rasulov V.R., Rasulov R.Y.
|
Vol 50, No 2 (2016) |
Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys |
(Eng)
|
Bodnar I.V., Victorov I.A., Jaafar M.A., Pauliukavets S.A.
|
Vol 50, No 1 (2016) |
On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range |
(Eng)
|
Sobolev V.V., Sobolev V.V., Anisimov D.V.
|
Vol 50, No 1 (2016) |
On the specific electrophysical properties of n-InSe single crystals |
(Eng)
|
Abdinov A.S., Babaeva R.F., Rzaev R.M., Ragimova N.A., Amirova S.I.
|
Vol 50, No 1 (2016) |
On the preparation and photoelectric properties of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys |
(Eng)
|
Danylchuk S.P., Myronchuk G.L., Mozolyuk M.Y., Bozhko V.V.
|
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