| Шығарылым |
Атауы |
Файл |
| Том 50, № 6 (2016) |
Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20–25, 2015) |
(Eng)
|
|
Khokhlov D.
|
| Том 50, № 6 (2016) |
Matrix-type effect on the magnetotransport properties of Ni–AlO and Ni–NbO composite systems |
(Eng)
|
|
Stognei O., Maliki A., Grebennikov A., Semenenko K., Bulovatskaya E., Sitnikov A.
|
| Том 50, № 6 (2016) |
Optical properties of In2Se3 thin films |
(Eng)
|
|
Bodnar I.
|
| Том 50, № 6 (2016) |
Anomalous thermoelectric power in Hg3In2Te6 crystals |
(Eng)
|
|
Grushka O.
|
| Том 50, № 6 (2016) |
Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga) |
(Eng)
|
|
Poklonski N., Vyrko S., Poklonskaya O., Zabrodskii A.
|
| Том 50, № 6 (2016) |
Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment |
(Eng)
|
|
Gaidar G., Baranskii P.
|
| Том 50, № 6 (2016) |
On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation |
(Eng)
|
|
Prokofieva L., Konstantinov P., Shabaldin A.
|
| Том 50, № 5 (2016) |
Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals |
(Eng)
|
|
Sobolev V., Perevoshchikov D.
|
| Том 50, № 5 (2016) |
X-ray conductivity of ZnSe single crystals |
(Eng)
|
|
Degoda V., Podust G.
|
| Том 50, № 4 (2016) |
Electronic structure of Pt-substituted clathrate silicides Ba8PtxSi46–x(x = 4–6) |
(Eng)
|
|
Borshch N.
|
| Том 50, № 4 (2016) |
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides |
(Eng)
|
|
Borisenko S.
|
| Том 50, № 4 (2016) |
Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment |
(Eng)
|
|
Nikitenko V., Amrakulov M., Khan M.
|
| Том 50, № 4 (2016) |
Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation |
(Eng)
|
|
Akimov A., Klimov A., Neizvestny I., Shumsky V., Epov V.
|
| Том 50, № 4 (2016) |
On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region |
(Eng)
|
|
Inglizian P., Mikheyev V., Novinkov V., Shchedrov E.
|
| Том 50, № 4 (2016) |
Features of photoinduced magnetism in some yttrium–iron-garnet single crystals |
(Eng)
|
|
Vorob’eva N., Mityukhlyaev V.
|
| Том 50, № 3 (2016) |
A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors |
(Eng)
|
|
Poklonski N., Vyrko S., Kovalev A., Zabrodskii A.
|
| Том 50, № 3 (2016) |
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC |
(Eng)
|
|
Kyuregyan A.
|
| Том 50, № 3 (2016) |
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well |
(Eng)
|
|
Hasanov K., Huseynov J., Dadashova V., Aliyev F.
|
| Том 50, № 2 (2016) |
On the theory of the two-photon linear photovoltaic effect in n-GaP |
(Eng)
|
|
Rasulov V., Rasulov R.
|
| Том 50, № 2 (2016) |
Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys |
(Eng)
|
|
Bodnar I., Victorov I., Jaafar M., Pauliukavets S.
|
| Том 50, № 1 (2016) |
On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range |
(Eng)
|
|
Sobolev V., Sobolev V., Anisimov D.
|
| Том 50, № 1 (2016) |
On the specific electrophysical properties of n-InSe single crystals |
(Eng)
|
|
Abdinov A., Babaeva R., Rzaev R., Ragimova N., Amirova S.
|
| Том 50, № 1 (2016) |
On the preparation and photoelectric properties of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys |
(Eng)
|
|
Danylchuk S., Myronchuk G., Mozolyuk M., Bozhko V.
|
| Нәтижелер 123 - 101/123 |
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