| Issue |
Title |
File |
| Vol 51, No 12 (2017) |
Effect of high voltage electric field on structure and property of PEDOT:PSS film |
(Eng)
|
|
Zhang J., Liu J.
|
| Vol 51, No 12 (2017) |
A comparative study on the electronic and optical properties of Sb2Se3 thin film |
(Eng)
|
|
Kamruzzaman M., Liu C., Farid Ul Islam A.K., Zapien J.A.
|
| Vol 51, No 10 (2017) |
Interdiffusion and phase formation in the Fe–TiO2 thin-film system |
(Eng)
|
|
Afonin N.N., Logacheva V.A.
|
| Vol 51, No 9 (2017) |
Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures |
(Eng)
|
|
Goldman E.I., Levashov S.A., Naryshkina V.G., Chucheva G.V.
|
| Vol 51, No 8 (2017) |
Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers |
(Eng)
|
|
Sekerbayev K.S., Taurbayev Y.T., Efimova A.I., Timoshenko V.Y., Taurbayev T.I.
|
| Vol 51, No 5 (2017) |
Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium |
(Eng)
|
|
Vlasov A.S., Karlina L.B., Komissarenko F.E., Ankudinov A.V.
|
| Vol 51, No 5 (2017) |
Morphology, optical, and adsorption properties of copper-oxide layers deposited from complex compound solutions |
(Eng)
|
|
Matyushkin L.B., Reshetnikova A.A., Andronov A.O., Afonicheva P.K., Myakin S.V., Permiakov N.V., Moshnikov V.A.
|
| Vol 51, No 4 (2017) |
Modification of the thermal relaxation kinetics of the photoinduced (at T = 425 K) metastable dark conductivity of a-Si:H films by weak illumination during the initial stage of relaxation |
(Eng)
|
|
Kurova I.A., Ormont N.N.
|
| Vol 51, No 4 (2017) |
Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe |
(Eng)
|
|
Kozhukhov A.S., Sheglov D.V., Latyshev A.V.
|
| Vol 51, No 2 (2017) |
Influence of the doping type and level on the morphology of porous Si formed by galvanic etching |
(Eng)
|
|
Pyatilova O.V., Gavrilov S.A., Shilyaeva Y.I., Pavlov A.A., Shaman Y.P., Dudin A.A.
|
| Vol 51, No 2 (2017) |
Study of silicon doped with zinc ions and annealed in oxygen |
(Eng)
|
|
Privezentsev V.V., Kirilenko E.P., Goryachev A.N., Batrakov A.A.
|
| Vol 51, No 2 (2017) |
Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes |
(Eng)
|
|
Lenshin A.S., Seredin P.V., Kavetskaya I.V., Minakov D.A., Kashkarov V.M.
|
| Vol 51, No 1 (2017) |
Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface |
(Eng)
|
|
Bekenev V.L., Zubkova S.M.
|
| Vol 51, No 1 (2017) |
On the growth, structure, and surface morphology of epitaxial CdTe films |
(Eng)
|
|
Nuriyev I.R., Mehrabova M.A., Nazarov A.M., Sadigov R.M., Hasanov N.G.
|
| Vol 50, No 10 (2016) |
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface |
(Eng)
|
|
Benemanskaya G.V., Dementev P.A., Kukushkin S.A., Lapushkin M.N., Osipov A.V., Senkovskiy B.V.
|
| Vol 50, No 9 (2016) |
Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures |
(Eng)
|
|
Kalygina V.M., Egorova I.M., Novikov V.A., Prudaev I.A., Tolbanov O.P.
|
| Vol 50, No 8 (2016) |
Study of the impurity photoconductivity in p-InSb using epitaxial p+ contacts |
(Eng)
|
|
Eminov S.O.
|
| Vol 50, No 8 (2016) |
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma |
(Eng)
|
|
Abdullin K.A., Gabdullin M.T., Gritsenko L.V., Ismailov D.V., Kalkozova Z.K., Kumekov S.E., Mukash Z.O., Sazonov A.Y., Terukov E.I.
|
| Vol 50, No 7 (2016) |
Local emission spectroscopy of surface micrograins in AIIIBV semiconductors |
(Eng)
|
|
Zhukov N.D., Gluhovskoy E.G., Mosiyash D.S.
|
| Vol 50, No 7 (2016) |
Indium nanowires at the silicon surface |
(Eng)
|
|
Kozhukhov A.S., Sheglov D.V., Latyshev A.V.
|
| Vol 50, No 6 (2016) |
On the local injection of emitted electrons into micrograins on the surface of AIII–BV semiconductors |
(Eng)
|
|
Zhukov N.D., Glukhovskoi E.G., Khazanov A.A.
|
| Vol 50, No 5 (2016) |
Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase |
(Eng)
|
|
Alpatov A.V., Vikhrov S.P., Kazanskii A.G., Lyaskovskii V.L., Rybin N.B., Rybina N.V., Forsh P.A.
|
| Vol 50, No 5 (2016) |
Atomic steps on an ultraflat Si(111) surface upon sublimation |
(Eng)
|
|
Sitnikov S.V., Latyshev A.V., Kosolobov S.S.
|
| Vol 50, No 4 (2016) |
Induced surface states of the ultrathin Ba/3C-SiC(111) interface |
(Eng)
|
|
Benemanskaya G.V., Dementev P.A., Kukushkin S.A., Lapushkin M.N., Senkovskiy B.V., Timoshnev S.N.
|
| Vol 50, No 3 (2016) |
Deep Centers at the Interface in In2xGa2(1–x)Te3/InAs and In2Te3/InAs Heterostructures |
(Eng)
|
|
Domashevskaya E.P., Mikhailyuk E.A., Prokopova T.V., Bezryadin N.N.
|
| 51 - 75 of 83 Items |
<< < 1 2 3 4 > >>
|
