| Шығарылым |
Атауы |
Файл |
| Том 51, № 12 (2017) |
Effect of high voltage electric field on structure and property of PEDOT:PSS film |
(Eng)
|
|
Zhang J., Liu J.
|
| Том 51, № 12 (2017) |
A comparative study on the electronic and optical properties of Sb2Se3 thin film |
(Eng)
|
|
Kamruzzaman M., Liu C., Farid Ul Islam A., Zapien J.
|
| Том 51, № 10 (2017) |
Interdiffusion and phase formation in the Fe–TiO2 thin-film system |
(Eng)
|
|
Afonin N., Logacheva V.
|
| Том 51, № 9 (2017) |
Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures |
(Eng)
|
|
Goldman E., Levashov S., Naryshkina V., Chucheva G.
|
| Том 51, № 8 (2017) |
Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers |
(Eng)
|
|
Sekerbayev K., Taurbayev Y., Efimova A., Timoshenko V., Taurbayev T.
|
| Том 51, № 5 (2017) |
Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium |
(Eng)
|
|
Vlasov A., Karlina L., Komissarenko F., Ankudinov A.
|
| Том 51, № 5 (2017) |
Morphology, optical, and adsorption properties of copper-oxide layers deposited from complex compound solutions |
(Eng)
|
|
Matyushkin L., Reshetnikova A., Andronov A., Afonicheva P., Myakin S., Permiakov N., Moshnikov V.
|
| Том 51, № 4 (2017) |
Modification of the thermal relaxation kinetics of the photoinduced (at T = 425 K) metastable dark conductivity of a-Si:H films by weak illumination during the initial stage of relaxation |
(Eng)
|
|
Kurova I., Ormont N.
|
| Том 51, № 4 (2017) |
Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe |
(Eng)
|
|
Kozhukhov A., Sheglov D., Latyshev A.
|
| Том 51, № 2 (2017) |
Influence of the doping type and level on the morphology of porous Si formed by galvanic etching |
(Eng)
|
|
Pyatilova O., Gavrilov S., Shilyaeva Y., Pavlov A., Shaman Y., Dudin A.
|
| Том 51, № 2 (2017) |
Study of silicon doped with zinc ions and annealed in oxygen |
(Eng)
|
|
Privezentsev V., Kirilenko E., Goryachev A., Batrakov A.
|
| Том 51, № 2 (2017) |
Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes |
(Eng)
|
|
Lenshin A., Seredin P., Kavetskaya I., Minakov D., Kashkarov V.
|
| Том 51, № 1 (2017) |
Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface |
(Eng)
|
|
Bekenev V., Zubkova S.
|
| Том 51, № 1 (2017) |
On the growth, structure, and surface morphology of epitaxial CdTe films |
(Eng)
|
|
Nuriyev I., Mehrabova M., Nazarov A., Sadigov R., Hasanov N.
|
| Том 50, № 10 (2016) |
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface |
(Eng)
|
|
Benemanskaya G., Dementev P., Kukushkin S., Lapushkin M., Osipov A., Senkovskiy B.
|
| Том 50, № 9 (2016) |
Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures |
(Eng)
|
|
Kalygina V., Egorova I., Novikov V., Prudaev I., Tolbanov O.
|
| Том 50, № 8 (2016) |
Study of the impurity photoconductivity in p-InSb using epitaxial p+ contacts |
(Eng)
|
|
Eminov S.
|
| Том 50, № 8 (2016) |
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma |
(Eng)
|
|
Abdullin K., Gabdullin M., Gritsenko L., Ismailov D., Kalkozova Z., Kumekov S., Mukash Z., Sazonov A., Terukov E.
|
| Том 50, № 7 (2016) |
Local emission spectroscopy of surface micrograins in AIIIBV semiconductors |
(Eng)
|
|
Zhukov N., Gluhovskoy E., Mosiyash D.
|
| Том 50, № 7 (2016) |
Indium nanowires at the silicon surface |
(Eng)
|
|
Kozhukhov A., Sheglov D., Latyshev A.
|
| Том 50, № 6 (2016) |
On the local injection of emitted electrons into micrograins on the surface of AIII–BV semiconductors |
(Eng)
|
|
Zhukov N., Glukhovskoi E., Khazanov A.
|
| Том 50, № 5 (2016) |
Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase |
(Eng)
|
|
Alpatov A., Vikhrov S., Kazanskii A., Lyaskovskii V., Rybin N., Rybina N., Forsh P.
|
| Том 50, № 5 (2016) |
Atomic steps on an ultraflat Si(111) surface upon sublimation |
(Eng)
|
|
Sitnikov S., Latyshev A., Kosolobov S.
|
| Том 50, № 4 (2016) |
Induced surface states of the ultrathin Ba/3C-SiC(111) interface |
(Eng)
|
|
Benemanskaya G., Dementev P., Kukushkin S., Lapushkin M., Senkovskiy B., Timoshnev S.
|
| Том 50, № 3 (2016) |
Deep Centers at the Interface in In2xGa2(1–x)Te3/InAs and In2Te3/InAs Heterostructures |
(Eng)
|
|
Domashevskaya E., Mikhailyuk E., Prokopova T., Bezryadin N.
|
| Нәтижелер 83 - 51/75 |
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