| Issue |
Title |
File |
| Vol 53, No 2 (2019) |
Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile |
(Eng)
|
|
Frolov D.S., Yakovlev G.E., Zubkov V.I.
|
| Vol 53, No 2 (2019) |
Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers |
(Eng)
|
|
Erofeev E.V., Fedin I.V., Fedina V.V., Fazleev A.P.
|
| Vol 53, No 2 (2019) |
Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers |
(Eng)
|
|
Tyschenko I.E., Popov I.V., Spesivtsev E.V.
|
| Vol 53, No 2 (2019) |
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates |
(Eng)
|
|
Galiev G.B., Klimov E.A., Klochkov A.N., Kopylov V.B., Pushkarev S.S.
|
| Vol 53, No 1 (2019) |
Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence |
(Eng)
|
|
Li G.V., Astrova E.V., Lihachev A.I.
|
| Vol 53, No 1 (2019) |
Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method |
(Eng)
|
|
Shchukin V.G., Sharafutdinov R.G., Konstantinov V.O.
|
| Vol 53, No 1 (2019) |
Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe |
(Eng)
|
|
Shvets V.A., Azarov I.A., Marin D.V., Yakushev M.V., Rykhlitsky S.V.
|
| Vol 52, No 13 (2018) |
Determination of the Region of Thermal Stability of the Size and Phase Composition of Silver-Sulfide Semiconductor Nanoparticles |
(Eng)
|
|
Sadovnikov S.I., Vovkotrub E.G.
|
| Vol 52, No 13 (2018) |
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations |
(Eng)
|
|
Semenov A.N., Nechaev D.V., Troshkov S.I., Nashchekin A.V., Brunkov P.N., Jmerik V.N., Ivanov S.V.
|
| Vol 52, No 13 (2018) |
Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices |
(Eng)
|
|
Kudryashov D.A., Gudovskikh A.S., Baranov A.I.
|
| Vol 52, No 13 (2018) |
New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters |
(Eng)
|
|
Nikitin S.E., Bobyl A.V., Avezova N.R., Terukov E.I.
|
| Vol 52, No 12 (2018) |
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation |
(Eng)
|
|
Ilin A.S., Matsukatova A.N., Forsh P.A., Vygranenko Y.
|
| Vol 52, No 10 (2018) |
Copper(I) Selenide Thin Films: Composition, Morphology, Structure, and Optical Properties |
(Eng)
|
|
Maskaeva L.N., Fedorova E.A., Markov V.F., Kuznetsov M.V., Lipina O.A., Pozdin A.V.
|
| Vol 52, No 10 (2018) |
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide |
(Eng)
|
|
Popov V.P., Antonov V.A., Vdovin V.I.
|
| Vol 52, No 10 (2018) |
Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films |
(Eng)
|
|
Markov L.K., Pavluchenko A.S., Smirnova I.P., Pavlov S.I.
|
| Vol 52, No 10 (2018) |
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography |
(Eng)
|
|
Lundin W.V., Tsatsulnikov A.F., Rodin S.N., Sakharov A.V., Usov S.O., Mitrofanov M.I., Levitskii I.V., Evtikhiev V.P.
|
| Vol 52, No 10 (2018) |
Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions |
(Eng)
|
|
Karlina L.B., Vlasov A.S., Soshnikov I.P., Smirnova I.P., Ber B.Y., Smirnov A.B.
|
| Vol 52, No 10 (2018) |
On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties |
(Eng)
|
|
Bodnar I.V., Detkov S.A., Kasyuk Y.V., Fedotova Y.A.
|
| Vol 52, No 10 (2018) |
Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films |
(Eng)
|
|
Ryaguzov A.P., Nemkayeva R.R., Guseinov N.R.
|
| Vol 52, No 9 (2018) |
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method |
(Eng)
|
|
Anisimov A.N., Wolfson A.A., Mokhov E.N.
|
| Vol 52, No 8 (2018) |
Crystal Structure and Band Gap of (MnIn2S4)1–x • (AgIn5S8)x Alloys |
(Eng)
|
|
Bodnar I.V., Tkhan C.B.
|
| Vol 52, No 7 (2018) |
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers |
(Eng)
|
|
Mamutin V.V., Vasilyev A.P., Lyutetskiy A.V., Ilyinskaya N.D., Zadiranov Y.M., Sofronov A.N., Firsov D.A., Vorobjev L.E., Maleev N.A., Ustinov V.M.
|
| Vol 52, No 7 (2018) |
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching |
(Eng)
|
|
Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Tatarinov E.E., Rodin S.N., Kaliteevski M.A., Evtikhiev V.P.
|
| Vol 52, No 6 (2018) |
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers |
(Eng)
|
|
Malin T.V., Milakhin D.S., Mansurov V.G., Galitsyn Y.G., Kozhuhov A.S., Ratnikov V.V., Smirnov A.N., Davydov V.Y., Zhuravlev K.S.
|
| Vol 52, No 6 (2018) |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
(Eng)
|
|
Ivanova M.M., Kachemtsev A.N., Mikhaylov A.N., Filatov D.O., Gorshkov A.P., Volkova N.S., Chalkov V.Y., Shengurov V.G.
|
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