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Mathematical model of thin-film electrode polarization
Kuznetsova I.A., Kulikov A.N., Kulova T.L., Metlitskaya A.V., Mironenko A.A., Rudyi A.S., Skundin A.M.
The detection limit of curved InGaAs/AlGaAs/GaAs hall bars
Chesnitskiy A.V., Mikhantiev E.A.
Characteristics of chloride memristors based on nanothick metal films
Rozanov R.Y., Kondrashov V.A., Nevolin V.K., Chaplygin Y.A.
Modeling of the high aspect groove etching in Si in a Cl2/Ar mixture plasma
Shumilov A.S., Amirov I.I., Lukichev V.F.
Use of thin film of a Co15Ti40N35 alloy for CVD catalytic growth of carbon nanotubes
Gromov D.G., Dubkov S.V., Pavlov A.A., Skorik S.N., Trifonov A.Y., Shulyatev A.S., Shaman Y.P., Rygalin B.N.
Simulation of the spectroscopic response and electron dynamics in a double quantum dot
Tsukanov A.V., Chekmachev V.G.
Analysis of the technological characteristics in fabricating SOI MEMS transducers
Parfenov N.M.
Nanoelectromechanical diamond structures in quantum informatics. Part II
Tsukanov A.V.
Kinetics of growth and plasma destruction of polymer films deposited in a glow discharge in methane
Barinov S.M., Efremov A.M.
Multilayer graphene-based flash memory
Novikov Y.N., Gritsenko V.A., Krasnikov G.Y., Orlov O.M.
Non-stationary phase transitions in systems metallization of silicon structures
Skvortsov A.A., Zuev S.M., Koryachko M.V.
The architecture of a branching prediction module based on a memristor and spintronic units with ultra-low power consumption
Kovalev A.V.
Nanoelectromechanical diamond structures in quantum informatics. Part I
Tsukanov A.V.
Influence of the annealing temperature on the ferroelectric properties of niobium-doped strontium–bismuth tantalate
Golosov D.A., Zavadski S.M., Kolos V.V., Turtsevich A.S., Okodzhi D.E.
Detection of terahertz radiation by resonant tunneling nanoheterostructures
Egorkin V.I., Kapaev V.V.
A universal digital platform for the construction of self-organizing wireless sensor networks for industrial safety and ecological monitoring systems
Sukhanov A.V., Prokof’ev I.V., Ivanov A.V.
The circuit and functional blocks for radiation-hard transceiver LSICs in SOI CMOS
Nazarova G.N., Elesin V.V., Nikiforov A.Y., Kuznetsov A.G., Usachev N.A., Amburkin D.M.
A nonlinear microwave model of a low-barrier diode based on semiconductor junctions
Arykov V.S., Yunusov I.V., Kagadei V.A., Fazleeva A.Y.
Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands
Fedorov Y.V., Gnatyuk D.L., Bugaev A.S., Matveenko O.S., Galiev R.R., Zuev A.V., Pavlov A.Y., Mikhailovich S.V.
Influence of ionizing radiation on the parameters of an operational amplifier based on complementary bipolar transistors
Dvornikov O.V., Tchekhovski V.A., Dziatlau V.L., Prokopenko N.N.
Formation of silver and zinc selenide relief patterns by the lift-off photolithography method
Lysich D.V., Zelentsov S.V., Kotomina V.E., Antonov I.N.
The influence of boundary conditions on the electrical conductivity of a thin cylindrical wire
Kuznetsova I.A., Savenko O.V., Yushkanov A.A.
Effect of a diamond heat spreader on the characteristics of gallium nitride-based transistors
Grishakov K.S., Elesin V.F., Kargin N.I., Ryzhuk R.V., Minnebaev S.V.
Investigation of the impact of plasma etching steps on the roughness of the fin FET channel sidewalls in the scheme of hetero-integration
Baranov G.V., Milenin A.P., Baklanov M.P.
Photoelectric and optical properties of Schottky-barrier photodiodes based on IrSi–Si
Kerimov E.A.
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