| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
|
| 卷 52, 编号 2 (2018) |
Surfaces, Interfaces, and Thin Films |
Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition |
|
| 卷 52, 编号 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
The Features of GaAs Nanowire SEM Images |
|
| 卷 52, 编号 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells |
|
| 卷 52, 编号 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates |
|
| 卷 52, 编号 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions |
|
| 卷 52, 编号 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon |
|
| 卷 52, 编号 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer |
|
| 卷 52, 编号 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Solar Cell Based on Core/Shell Nanowires |
|
| 卷 52, 编号 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
InGaN/GaN QDs Nanorods: Processing and Properties |
|
| 卷 53, 编号 12 (2019) |
Physics of Semiconductor Devices |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
|
| 卷 53, 编号 16 (2019) |
Nanostructures Technology |
Photoactive ZnO–Al2O3 Transparent Coatings and Nanocomposites Prepared by a Simple Polymer-Salt Synthesis |
|
