Информация об авторе

Ivanov, P. A.

Выпуск Раздел Название Файл
Том 50, № 5 (2016) Physics of Semiconductor Devices Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
Том 50, № 7 (2016) Electronic Properties of Semiconductors Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC
Том 50, № 7 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films
Том 51, № 3 (2017) Physics of Semiconductor Devices Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode
Том 51, № 9 (2017) Physics of Semiconductor Devices Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode
Том 52, № 1 (2018) Physics of Semiconductor Devices On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel
Том 52, № 10 (2018) Physics of Semiconductor Devices Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes
Том 52, № 12 (2018) Physics of Semiconductor Devices Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes
Том 53, № 3 (2019) Physics of Semiconductor Devices Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package)
Том 53, № 6 (2019) Physics of Semiconductor Devices Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation
Том 53, № 10 (2019) Physics of Semiconductor Devices Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Том 53, № 12 (2019) Electronic Properties of Semiconductors Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs

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