| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 7 (2016) |
Carbon Systems |
Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum |
|
| Том 51, № 3 (2017) |
Electronic Properties of Semiconductors |
Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers |
|
| Том 51, № 8 (2017) |
Spectroscopy, Interaction with Radiation |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
|
| Том 51, № 8 (2017) |
Carbon Systems |
Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) |
|
| Том 52, № 3 (2018) |
Electronic Properties of Semiconductors |
Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers |
|
| Том 52, № 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer |
|
| Том 52, № 12 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates |
|
| Том 52, № 12 (2018) |
Carbon Systems |
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface |
|
| Том 52, № 12 (2018) |
Physics of Semiconductor Devices |
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects |
|
| Том 52, № 13 (2018) |
Physics of Semiconductor Devices |
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles |
|
| Том 52, № 14 (2018) |
Graphene |
High Quality Graphene Grown by Sublimation on 4H-SiC (0001) |
|
| Том 53, № 7 (2019) |
Physics of Semiconductor Devices |
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
|
| Том 53, № 10 (2019) |
Physics of Semiconductor Devices |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
|
| Том 53, № 12 (2019) |
Electronic Properties of Semiconductors |
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs |
|
| Том 53, № 14 (2019) |
Nanostructures Characterization |
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC |
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