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Vol 53, No 9 (2019)

Semiconductor Heterolasers with Double-Mirror Two-Dimensional Bragg Resonators

Baryshev V.R., Ginzburg N.S., Zaslavsky V.Y., Malkin A.M.

(Eng)

Vol 53, No 15 (2019)

Study of the Formation Process of Memristor Structures Based on Copper Sulfide

Belov A.N., Golishnikov A.A., Mastinin A.M., Perevalov A.A., Shevyakov V.I.

(Eng)

Vol 52, No 11 (2018)

Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation

Khananova A.V., Obolensky S.V.

(Eng)

Vol 53, No 14 (2019)

Study of the Photovoltage in Mn/SiO₂/n-Si MOS Structure at Cryogenic Temperatures

Bondarev I.A., Rautskii M.V., Yakovlev I.A., Volochaev M.N., Lukyanenko A.V., Tarasov A.S., Volkov N.V.

(Eng)

Vol 52, No 11 (2018)

The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures

Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Antonov I.N.

(Eng)

Vol 53, No 12 (2019)

Charge Transfer in Gap Structures Based on the Chalcogenide System (As₂Se₃)_{100 –}_xBi_x

Castro R.A., Khanin S.D., Smirnov A.P., Kononov A.A.

(Eng)

Vol 52, No 10 (2018)

Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities

Mintairov M.A., Evstropov V.V., Mintairov S.A., Salii R.A., Shvarts M.Z., Kalyuzhnyy N.A.

(Eng)

Vol 53, No 11 (2019)

Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality

Nadtochiy A.M., Mintairov S.A., Kalyuzhnyy N.A., Maximov M.V., Sannikov D.A., Yagafarov T.F., Zhukov A.E.

(Eng)

Vol 50, No 13 (2016)

Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals

Usanov D.A., Nikitov S.A., Skripal A.V., Ponomarev D.V., Latysheva E.V.

(Eng)

Vol 53, No 10 (2019)

Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics

Yurasov D.V., Baidakova N.A., Verbus V.A., Gusev N.S., Mashin A.I., Morozova E.E., Nezhdanov A.V., Novikov A.V., Skorohodov E.V., Shengurov D.V., Yablonskiy A.N.

(Eng)

Vol 53, No 9 (2019)

Tunnel Diodes Based on n⁺-Ge/p⁺-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition

Shengurov V.G., Filatov D.O., Denisov S.A., Chalkov V.Y., Alyabina N.A., Zaitsev A.V.

(Eng)

Vol 53, No 9 (2019)

Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures

Kozlov D.V., Rumyantsev V.V., Morozov S.V.

(Eng)

1 - 12 of 12 Items

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