Author Details

Shashkin, V. I.

Issue Section Title File
Vol 50, No 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
Vol 50, No 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
Vol 51, No 8 (2017) Erratum Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
Vol 51, No 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon
Vol 51, No 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
Vol 52, No 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Study of the Structural and Morphological Properties of HPHT Diamond Substrates
Vol 52, No 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma
Vol 53, No 9 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond
Vol 53, No 10 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 Vertical Field-Effect Transistor with a Controlling GaAs-Based pn Junction
Vol 53, No 10 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers

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