Author Details

Arsentyev, I. N.

Issue Section Title File
Vol 50, No 7 (2016) Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
Vol 50, No 9 (2016) Fabrication, Treatment, and Testing of Materials and Structures Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
Vol 51, No 8 (2017) Fabrication, Treatment, and Testing of Materials and Structures Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties
Vol 51, No 9 (2017) Electronic Properties of Semiconductors Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties
Vol 52, No 1 (2018) Fabrication, Treatment, and Testing of Materials and Structures Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100)
Vol 52, No 8 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy
Vol 52, No 9 (2018) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
Vol 52, No 13 (2018) Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures
Vol 53, No 1 (2019) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology
Vol 53, No 7 (2019) Fabrication, Treatment, and Testing of Materials and Structures Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy
Vol 53, No 8 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment
Vol 53, No 8 (2019) Fabrication, Treatment, and Testing of Materials and Structures Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Vol 53, No 11 (2019) Fabrication, Treatment, and Testing of Materials and Structures On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies