Автор туралы ақпарат

Arsentyev, I. N.

Шығарылым Бөлім Атауы Файл
Том 50, № 7 (2016) Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
Том 50, № 9 (2016) Fabrication, Treatment, and Testing of Materials and Structures Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
Том 51, № 8 (2017) Fabrication, Treatment, and Testing of Materials and Structures Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties
Том 51, № 9 (2017) Electronic Properties of Semiconductors Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties
Том 52, № 1 (2018) Fabrication, Treatment, and Testing of Materials and Structures Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100)
Том 52, № 8 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy
Том 52, № 9 (2018) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
Том 52, № 13 (2018) Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures
Том 53, № 1 (2019) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology
Том 53, № 7 (2019) Fabrication, Treatment, and Testing of Materials and Structures Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy
Том 53, № 8 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment
Том 53, № 8 (2019) Fabrication, Treatment, and Testing of Materials and Structures Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Том 53, № 11 (2019) Fabrication, Treatment, and Testing of Materials and Structures On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates

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