Author Details

Latyshev, A. V.

Issue Section Title File
Vol 50, No 5 (2016) Surfaces, Interfaces, and Thin Films Atomic steps on an ultraflat Si(111) surface upon sublimation
Vol 50, No 7 (2016) Surfaces, Interfaces, and Thin Films Indium nanowires at the silicon surface
Vol 51, No 2 (2017) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
Vol 51, No 4 (2017) Surfaces, Interfaces, and Thin Films Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe
Vol 52, No 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation
Vol 52, No 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology New Method of Porous Ge Layer Fabrication: Structure and Optical Properties
Vol 52, No 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Atomic Force Microscopy Local Oxidation of GeO Thin Films
Vol 53, No 4 (2019) Surfaces, Interfaces, and Thin Films Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing
Vol 53, No 6 (2019) Surfaces, Interfaces, and Thin Films Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation
Vol 53, No 16 (2019) Nanostructures Technology Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods

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