| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 5 (2016) |
Surfaces, Interfaces, and Thin Films |
Atomic steps on an ultraflat Si(111) surface upon sublimation |
|
| 卷 50, 编号 7 (2016) |
Surfaces, Interfaces, and Thin Films |
Indium nanowires at the silicon surface |
|
| 卷 51, 编号 2 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth |
|
| 卷 51, 编号 4 (2017) |
Surfaces, Interfaces, and Thin Films |
Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe |
|
| 卷 52, 编号 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation |
|
| 卷 52, 编号 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
New Method of Porous Ge Layer Fabrication: Structure and Optical Properties |
|
| 卷 52, 编号 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Atomic Force Microscopy Local Oxidation of GeO Thin Films |
|
| 卷 53, 编号 4 (2019) |
Surfaces, Interfaces, and Thin Films |
Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing |
|
| 卷 53, 编号 6 (2019) |
Surfaces, Interfaces, and Thin Films |
Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation |
|
| 卷 53, 编号 16 (2019) |
Nanostructures Technology |
Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods |
|
