| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 5 (2016) |
Surfaces, Interfaces, and Thin Films |
Atomic steps on an ultraflat Si(111) surface upon sublimation |
|
| Том 50, № 7 (2016) |
Surfaces, Interfaces, and Thin Films |
Indium nanowires at the silicon surface |
|
| Том 51, № 2 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth |
|
| Том 51, № 4 (2017) |
Surfaces, Interfaces, and Thin Films |
Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe |
|
| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation |
|
| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
New Method of Porous Ge Layer Fabrication: Structure and Optical Properties |
|
| Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Atomic Force Microscopy Local Oxidation of GeO Thin Films |
|
| Том 53, № 4 (2019) |
Surfaces, Interfaces, and Thin Films |
Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing |
|
| Том 53, № 6 (2019) |
Surfaces, Interfaces, and Thin Films |
Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation |
|
| Том 53, № 16 (2019) |
Nanostructures Technology |
Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods |
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