| 期 |
标题 |
文件 |
| 卷 51, 编号 4 (2017) |
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures |
(Eng)
|
|
Slapovskiy D., Pavlov A., Pavlov V., Klekovkin A.
|
| 卷 51, 编号 4 (2017) |
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling |
(Eng)
|
|
Vexler M., Illarionov Y., Grekhov I.
|
| 卷 51, 编号 3 (2017) |
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field |
(Eng)
|
|
Balagula R., Vinnichenko M., Makhov I., Sofronov A., Firsov D., Vorobjev L.
|
| 卷 51, 编号 3 (2017) |
On the size and temperature dependence of the energy gap in cadmium-selenide quantum dots embedded in fluorophosphate glasses |
(Eng)
|
|
Lipatova Z., Kolobkova E., Babkina A., Nikonorov N.
|
| 卷 51, 编号 3 (2017) |
Valence-band offsets in strained SiGeSn/Si layers with different tin contents |
(Eng)
|
|
Bloshkin A., Yakimov A., Timofeev V., Tuktamyshev A., Nikiforov A., Murashov V.
|
| 卷 51, 编号 3 (2017) |
Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition |
(Eng)
|
|
Kopach V., Klepikova K., Klochko N., Khrypunov G., Korsun V., Lyubov V., Kirichenko M., Kopach A.
|
| 卷 51, 编号 3 (2017) |
Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions |
(Eng)
|
|
Parkhomenko H., Solovan M., Mostovyi A., Ulyanytsky K., Maryanchuk P.
|
| 卷 51, 编号 3 (2017) |
Formation of silicon nanocrystals in multilayer nanoperiodic a-SiOx/insulator structures from the results of synchrotron investigations |
(Eng)
|
|
Turishchev S., Terekhov V., Koyuda D., Ershov A., Mashin A., Parinova E., Nesterov D., Grachev D., Karabanova I., Domashevskaya E.
|
| 卷 51, 编号 3 (2017) |
Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics |
(Eng)
|
|
Kirsanov N., Latukhina N., Lizunkova D., Rogozhina G., Stepikhova M.
|
| 卷 51, 编号 3 (2017) |
Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD |
(Eng)
|
|
Mintairov S., Kalyuzhnyy N., Nadtochiy A., Maximov M., Rouvimov S., Zhukov A.
|
| 卷 51, 编号 2 (2017) |
Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction |
(Eng)
|
|
Avakyants L., Aslanyan A., Bokov P., Polozhentsev K., Chervyakov A.
|
| 卷 51, 编号 2 (2017) |
New mechanism of semiconductor polarization at the interface with an organic insulator |
(Eng)
|
|
Yafyasov A., Bogevolnov V., Ryumtsev E., Kovshik A., Mikhailovski V.
|
| 卷 51, 编号 2 (2017) |
Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices |
(Eng)
|
|
Shuleiko D., Zabotnov S., Zhigunov D., Zelenina A., Kamenskih I., Kashkarov P.
|
| 卷 51, 编号 2 (2017) |
Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth |
(Eng)
|
|
Sitnikov S., Kosolobov S., Latyshev A.
|
| 卷 51, 编号 1 (2017) |
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells |
(Eng)
|
|
Krishtopenko S., Ikonnikov A., Maremyanin K., Bovkun L., Spirin K., Kadykov A., Marcinkiewicz M., Ruffenach S., Consejo C., Teppe F., Knap W., Semyagin B., Putyato M., Emelyanov E., Preobrazhenskii V., Gavrilenko V.
|
| 卷 51, 编号 1 (2017) |
Spin-dependent tunneling recombination in heterostructures with a magnetic layer |
(Eng)
|
|
Denisov K., Rozhansky I., Averkiev N., Lähderanta E.
|
| 卷 50, 编号 10 (2016) |
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures |
(Eng)
|
|
Bagraev N., Chernev A., Klyachkin L., Malyarenko A., Emel’yanov A., Dubina M.
|
| 卷 50, 编号 9 (2016) |
Optical properties of hybrid quantum-confined structures with high absorbance |
(Eng)
|
|
Nadtochiy A., Kalyuzhnyy N., Mintairov S., Payusov A., Rouvimov S., Maximov M., Zhukov A.
|
| 卷 50, 编号 9 (2016) |
Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range |
(Eng)
|
|
Gladyshev A., Novikov I., Karachinsky L., Denisov D., Blokhin S., Blokhin A., Nadtochiy A., Kurochkin A., Egorov A.
|
| 卷 50, 编号 9 (2016) |
Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector |
(Eng)
|
|
Chatbouri S., Troudi M., Sghaier N., Kalboussi A., Aimez V., Drouin D., Souifi A.
|
| 卷 50, 编号 9 (2016) |
Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide |
(Eng)
|
|
Altuhov V., Kasyanenko I., Sankin A., Bilalov B., Sigov A.
|
| 卷 50, 编号 9 (2016) |
On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena |
(Eng)
|
|
Petrov V., Sidorov V., Talnishnikh N., Chernyakov A., Shabunina E., Shmidt N., Usikov A., Helava H., Makarov Y.
|
| 卷 50, 编号 8 (2016) |
Conduction in titanium dioxide films and metal–TiO2–Si structures |
(Eng)
|
|
Kalygina V., Egorova I., Prudaev I., Tolbanov O.
|
| 卷 50, 编号 8 (2016) |
Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures |
(Eng)
|
|
Solovan M., Mostovyi A., Brus V., Maistruk E., Maryanchuk P.
|
| 卷 50, 编号 8 (2016) |
Room temperature de Haas–van Alphen effect in silicon nanosandwiches |
(Eng)
|
|
Bagraev N., Grigoryev V., Klyachkin L., Malyarenko A., Mashkov V., Romanov V.
|
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