| Issue |
Title |
File |
| Vol 51, No 3 (2017) |
Atomic configuration and charge state of hydrogen at dislocations in silicon |
(Eng)
|
|
Vysotskii N.V., Loshachenko A.S., Vyvenko O.F.
|
| Vol 51, No 3 (2017) |
Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers |
(Eng)
|
|
Kozlovski V.V., Lebedev A.A., Strel’chuk A.M., Davidovskaya K.S., Vasil’ev A.E., Makarenko L.F.
|
| Vol 51, No 2 (2017) |
Field diffusion in disordered organic materials under conditions of occupied deep states |
(Eng)
|
|
Nikitenko V.R., Kudrov A.Y.
|
| Vol 51, No 2 (2017) |
Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields |
(Eng)
|
|
Veinger A.I., Tisnek T.V., Kochman I.V., Okulov V.I.
|
| Vol 51, No 2 (2017) |
Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y |
(Eng)
|
|
Romaka V.A., Rogl P., Romaka V.V., Kaczorowski D., Krayovskyy V.Y., Stadnyk Y.V., Horyn A.M.
|
| Vol 51, No 2 (2017) |
Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors |
(Eng)
|
|
Sherchenkov A.A., Kozyukhin S.A., Lazarenko P.I., Babich A.V., Bogoslovskiy N.A., Sagunova I.V., Redichev E.N.
|
| Vol 51, No 2 (2017) |
On the thermopower and thermomagnetic properties of ErxSn1–xSe solid solutions |
(Eng)
|
|
Huseynov J.I., Murguzov M.I., Ismayilov S.S., Mamedova R.F., Gojayev E.M.
|
| Vol 51, No 1 (2017) |
Investigations of CuFeS2 semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field |
(Eng)
|
|
Matukhin V.L., Pogoreltsev A.I., Gavrilenko A.N., Garkavyi S.O., Shmidt E.V., Babaeva S.F., Sukhanova A.A., Terukov E.I.
|
| Vol 51, No 1 (2017) |
Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices |
(Eng)
|
|
Zhdanov E.Y., Pogosov A.G., Budantsev M.V., Pokhabov D.A., Bakarov A.K.
|
| Vol 51, No 1 (2017) |
Two-tone nonlinear electrostatic waves in the quantum electron–hole plasma of semiconductors |
(Eng)
|
|
Dubinov A.E., Kitayev I.N.
|
| Vol 51, No 1 (2017) |
Lifetime of excess electrons in Cu–Zn–Sn–Se powders |
(Eng)
|
|
Novikov G.F., Gapanovich M.V., Gremenok V.F., Bocharov K.V., Tsai W.-., Jeng M., Chang L.
|
| Vol 50, No 10 (2016) |
Energy spectrum of charge carriers in TlIn1–xYbxTe2 solid solutions |
(Eng)
|
|
Aliev F.F., Agaeva U.M., Zarbaliev M.M.
|
| Vol 50, No 10 (2016) |
First-principles calculations of the electronic and structural properties of GaSb |
(Eng)
|
|
Castaño-González E., Seña N., Mendoza-Estrada V., González-Hernández R., Dussan A., Mesa F.
|
| Vol 50, No 10 (2016) |
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals |
(Eng)
|
|
Podkopaev O.I., Shimanskiy A.F., Kopytkova S.A., Filatov R.A., Golubovskaya N.O.
|
| Vol 50, No 10 (2016) |
Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons |
(Eng)
|
|
Emtsev V.V., Abrosimov N.V., Kozlovskii V.V., Oganesyan G.A., Poloskin D.S.
|
| Vol 50, No 10 (2016) |
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm |
(Eng)
|
|
Novikov I.I., Karachinsky L.Y., Egorov A.Y., Babichev A.V., Bousseksou A., Pikhtin N.A., Tarasov I.S., Nikitina E.V., Sofronov A.N., Firsov D.A., Vorobjev L.E.
|
| Vol 50, No 9 (2016) |
Low-temperature conductivity of gadolinium sulfides |
(Eng)
|
|
Mustafaeva S.N., Asadov S.M.
|
| Vol 50, No 9 (2016) |
Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors |
(Eng)
|
|
Kaminskii V.V., Kazanin M.M., Romanova M.V., Kamenskaya G.A., Sharenkova N.V.
|
| Vol 50, No 9 (2016) |
Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8 |
(Eng)
|
|
Bodnar I.V.
|
| Vol 50, No 8 (2016) |
Temperature dependence of the hall coefficient in the Вi1–xSbx System (x = 0.06, 0.12) |
(Eng)
|
|
Tairov B.A., Gasanova X.A., Selim-zade R.I.
|
| Vol 50, No 7 (2016) |
Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor |
(Eng)
|
|
Romaka V.A., Rogl P., Romaka V.V., Kaczorowski D., Stadnyk Y.V., Krayovskyy V.Y., Horyn A.M.
|
| Vol 50, No 7 (2016) |
Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3 |
(Eng)
|
|
Kudryashov A.A., Kytin V.G., Lunin R.A., Kulbachinskii V.A., Banerjee A.
|
| Vol 50, No 7 (2016) |
Electron exchange between tin impurity U– centers in PbSzSe1–z alloys |
(Eng)
|
|
Marchenko A.V., Terukov E.I., Seregin P.P., Rasnjuk A.N., Kiselev V.S.
|
| Vol 50, No 7 (2016) |
Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC |
(Eng)
|
|
Ivanov P.A., Potapov A.S., Samsonova T.P., Grekhov I.V.
|
| Vol 50, No 6 (2016) |
Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20–25, 2015) |
(Eng)
|
|
Khokhlov D.R.
|
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