| Шығарылым |
Атауы |
Файл |
| Том 51, № 3 (2017) |
Atomic configuration and charge state of hydrogen at dislocations in silicon |
(Eng)
|
|
Vysotskii N., Loshachenko A., Vyvenko O.
|
| Том 51, № 3 (2017) |
Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers |
(Eng)
|
|
Kozlovski V., Lebedev A., Strel’chuk A., Davidovskaya K., Vasil’ev A., Makarenko L.
|
| Том 51, № 2 (2017) |
Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y |
(Eng)
|
|
Romaka V., Rogl P., Romaka V., Kaczorowski D., Krayovskyy V., Stadnyk Y., Horyn A.
|
| Том 51, № 2 (2017) |
Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors |
(Eng)
|
|
Sherchenkov A., Kozyukhin S., Lazarenko P., Babich A., Bogoslovskiy N., Sagunova I., Redichev E.
|
| Том 51, № 2 (2017) |
On the thermopower and thermomagnetic properties of ErxSn1–xSe solid solutions |
(Eng)
|
|
Huseynov J., Murguzov M., Ismayilov S., Mamedova R., Gojayev E.
|
| Том 51, № 2 (2017) |
Field diffusion in disordered organic materials under conditions of occupied deep states |
(Eng)
|
|
Nikitenko V., Kudrov A.
|
| Том 51, № 2 (2017) |
Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields |
(Eng)
|
|
Veinger A., Tisnek T., Kochman I., Okulov V.
|
| Том 51, № 1 (2017) |
Two-tone nonlinear electrostatic waves in the quantum electron–hole plasma of semiconductors |
(Eng)
|
|
Dubinov A., Kitayev I.
|
| Том 51, № 1 (2017) |
Lifetime of excess electrons in Cu–Zn–Sn–Se powders |
(Eng)
|
|
Novikov G., Gapanovich M., Gremenok V., Bocharov K., Tsai W., Jeng M., Chang L.
|
| Том 51, № 1 (2017) |
Investigations of CuFeS2 semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field |
(Eng)
|
|
Matukhin V., Pogoreltsev A., Gavrilenko A., Garkavyi S., Shmidt E., Babaeva S., Sukhanova A., Terukov E.
|
| Том 51, № 1 (2017) |
Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices |
(Eng)
|
|
Zhdanov E., Pogosov A., Budantsev M., Pokhabov D., Bakarov A.
|
| Том 50, № 10 (2016) |
Energy spectrum of charge carriers in TlIn1–xYbxTe2 solid solutions |
(Eng)
|
|
Aliev F., Agaeva U., Zarbaliev M.
|
| Том 50, № 10 (2016) |
First-principles calculations of the electronic and structural properties of GaSb |
(Eng)
|
|
Castaño-González E., Seña N., Mendoza-Estrada V., González-Hernández R., Dussan A., Mesa F.
|
| Том 50, № 10 (2016) |
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals |
(Eng)
|
|
Podkopaev O., Shimanskiy A., Kopytkova S., Filatov R., Golubovskaya N.
|
| Том 50, № 10 (2016) |
Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons |
(Eng)
|
|
Emtsev V., Abrosimov N., Kozlovskii V., Oganesyan G., Poloskin D.
|
| Том 50, № 10 (2016) |
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm |
(Eng)
|
|
Novikov I., Karachinsky L., Egorov A., Babichev A., Bousseksou A., Pikhtin N., Tarasov I., Nikitina E., Sofronov A., Firsov D., Vorobjev L.
|
| Том 50, № 9 (2016) |
Low-temperature conductivity of gadolinium sulfides |
(Eng)
|
|
Mustafaeva S., Asadov S.
|
| Том 50, № 9 (2016) |
Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors |
(Eng)
|
|
Kaminskii V., Kazanin M., Romanova M., Kamenskaya G., Sharenkova N.
|
| Том 50, № 9 (2016) |
Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8 |
(Eng)
|
|
Bodnar I.
|
| Том 50, № 8 (2016) |
Temperature dependence of the hall coefficient in the Вi1–xSbx System (x = 0.06, 0.12) |
(Eng)
|
|
Tairov B., Gasanova X., Selim-zade R.
|
| Том 50, № 7 (2016) |
Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor |
(Eng)
|
|
Romaka V., Rogl P., Romaka V., Kaczorowski D., Stadnyk Y., Krayovskyy V., Horyn A.
|
| Том 50, № 7 (2016) |
Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3 |
(Eng)
|
|
Kudryashov A., Kytin V., Lunin R., Kulbachinskii V., Banerjee A.
|
| Том 50, № 7 (2016) |
Electron exchange between tin impurity U– centers in PbSzSe1–z alloys |
(Eng)
|
|
Marchenko A., Terukov E., Seregin P., Rasnjuk A., Kiselev V.
|
| Том 50, № 7 (2016) |
Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC |
(Eng)
|
|
Ivanov P., Potapov A., Samsonova T., Grekhov I.
|
| Том 50, № 6 (2016) |
Radiation-induced bistable centers with deep levels in silicon n+–p structures |
(Eng)
|
|
Lastovskii S., Markevich V., Yakushevich H., Murin L., Krylov V.
|
| Нәтижелер 123 - 76/100 |
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