Electronic Properties of Semiconductors

标题 文件
卷 51, 编号 3 (2017) Atomic configuration and charge state of hydrogen at dislocations in silicon PDF
(Eng)
Vysotskii N., Loshachenko A., Vyvenko O.
卷 51, 编号 3 (2017) Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers PDF
(Eng)
Kozlovski V., Lebedev A., Strel’chuk A., Davidovskaya K., Vasil’ev A., Makarenko L.
卷 51, 编号 2 (2017) Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y PDF
(Eng)
Romaka V., Rogl P., Romaka V., Kaczorowski D., Krayovskyy V., Stadnyk Y., Horyn A.
卷 51, 编号 2 (2017) Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors PDF
(Eng)
Sherchenkov A., Kozyukhin S., Lazarenko P., Babich A., Bogoslovskiy N., Sagunova I., Redichev E.
卷 51, 编号 2 (2017) On the thermopower and thermomagnetic properties of ErxSn1–xSe solid solutions PDF
(Eng)
Huseynov J., Murguzov M., Ismayilov S., Mamedova R., Gojayev E.
卷 51, 编号 2 (2017) Field diffusion in disordered organic materials under conditions of occupied deep states PDF
(Eng)
Nikitenko V., Kudrov A.
卷 51, 编号 2 (2017) Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields PDF
(Eng)
Veinger A., Tisnek T., Kochman I., Okulov V.
卷 51, 编号 1 (2017) Two-tone nonlinear electrostatic waves in the quantum electron–hole plasma of semiconductors PDF
(Eng)
Dubinov A., Kitayev I.
卷 51, 编号 1 (2017) Lifetime of excess electrons in Cu–Zn–Sn–Se powders PDF
(Eng)
Novikov G., Gapanovich M., Gremenok V., Bocharov K., Tsai W., Jeng M., Chang L.
卷 51, 编号 1 (2017) Investigations of CuFeS2 semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field PDF
(Eng)
Matukhin V., Pogoreltsev A., Gavrilenko A., Garkavyi S., Shmidt E., Babaeva S., Sukhanova A., Terukov E.
卷 51, 编号 1 (2017) Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices PDF
(Eng)
Zhdanov E., Pogosov A., Budantsev M., Pokhabov D., Bakarov A.
卷 50, 编号 10 (2016) Energy spectrum of charge carriers in TlIn1–xYbxTe2 solid solutions PDF
(Eng)
Aliev F., Agaeva U., Zarbaliev M.
卷 50, 编号 10 (2016) First-principles calculations of the electronic and structural properties of GaSb PDF
(Eng)
Castaño-González E., Seña N., Mendoza-Estrada V., González-Hernández R., Dussan A., Mesa F.
卷 50, 编号 10 (2016) Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals PDF
(Eng)
Podkopaev O., Shimanskiy A., Kopytkova S., Filatov R., Golubovskaya N.
卷 50, 编号 10 (2016) Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons PDF
(Eng)
Emtsev V., Abrosimov N., Kozlovskii V., Oganesyan G., Poloskin D.
卷 50, 编号 10 (2016) Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm PDF
(Eng)
Novikov I., Karachinsky L., Egorov A., Babichev A., Bousseksou A., Pikhtin N., Tarasov I., Nikitina E., Sofronov A., Firsov D., Vorobjev L.
卷 50, 编号 9 (2016) Low-temperature conductivity of gadolinium sulfides PDF
(Eng)
Mustafaeva S., Asadov S.
卷 50, 编号 9 (2016) Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors PDF
(Eng)
Kaminskii V., Kazanin M., Romanova M., Kamenskaya G., Sharenkova N.
卷 50, 编号 9 (2016) Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8 PDF
(Eng)
Bodnar I.
卷 50, 编号 8 (2016) Temperature dependence of the hall coefficient in the Вi1–xSbx System (x = 0.06, 0.12) PDF
(Eng)
Tairov B., Gasanova X., Selim-zade R.
卷 50, 编号 7 (2016) Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor PDF
(Eng)
Romaka V., Rogl P., Romaka V., Kaczorowski D., Stadnyk Y., Krayovskyy V., Horyn A.
卷 50, 编号 7 (2016) Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3 PDF
(Eng)
Kudryashov A., Kytin V., Lunin R., Kulbachinskii V., Banerjee A.
卷 50, 编号 7 (2016) Electron exchange between tin impurity U centers in PbSzSe1–z alloys PDF
(Eng)
Marchenko A., Terukov E., Seregin P., Rasnjuk A., Kiselev V.
卷 50, 编号 7 (2016) Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC PDF
(Eng)
Ivanov P., Potapov A., Samsonova T., Grekhov I.
卷 50, 编号 6 (2016) Radiation-induced bistable centers with deep levels in silicon n+p structures PDF
(Eng)
Lastovskii S., Markevich V., Yakushevich H., Murin L., Krylov V.
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