| Issue |
Title |
File |
| Vol 52, No 6 (2018) |
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution |
(Eng)
|
|
Kalinkin I.P., Kukushkin S.A., Osipov A.V.
|
| Vol 52, No 6 (2018) |
Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation |
(Eng)
|
|
Yakovlev S.A., Ankudinov A.V., Vorobyov Y.V., Voronov M.M., Kozyukhin S.A., Melekh B.T., Pevtsov A.B.
|
| Vol 52, No 6 (2018) |
Variation in the Conductivity of Polyaniline Nanotubes During Their Formation |
(Eng)
|
|
Kapralova V.M., Sapurina I.Y., Sudar’ N.T.
|
| Vol 52, No 3 (2018) |
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures |
(Eng)
|
|
Galiev G.B., Klimov E.A., Klochkov A.N., Pushkarev S.S., Maltsev P.P.
|
| Vol 52, No 3 (2018) |
Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization |
(Eng)
|
|
Agekyan V.F., Borisov E.V., Gudovskikh A.S., Kudryashov D.A., Monastyrenko A.O., Serov A.Y., Filosofov N.G.
|
| Vol 52, No 3 (2018) |
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |
(Eng)
|
|
Esin M.Y., Nikiforov A.I., Timofeev V.A., Tuktamyshev A.R., Mashanov V.I., Loshkarev I.D., Deryabin A.S., Pchelyakov O.P.
|
| Vol 52, No 3 (2018) |
Formation of Macropores in n-Si upon Anodization in an Organic Electrolyte |
(Eng)
|
|
Li G.V., Pavlov S.I., Astrova E.V., Preobrazhenskiy N.E.
|
| Vol 52, No 2 (2018) |
Electrical Activity of Extended Defects in Multicrystalline Silicon |
(Eng)
|
|
Pescherova S.M., Yakimov E.B., Nepomnyashchikh A.I., Pavlova L.A., Feklisova O.V., Presnyakov R.V.
|
| Vol 52, No 2 (2018) |
Luminescence Properties of CdxZn1 – xO Thin Films |
(Eng)
|
|
Lotin A.A., Novodvorsky O.A., Parshina L.S., Khramova O.D., Cherebylo E.A., Mikhalevsky V.A.
|
| Vol 52, No 2 (2018) |
Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics |
(Eng)
|
|
Shimanskii A.F., Pavlyuk T.O., Kopytkova S.A., Filatov R.A., Gorodishcheva A.N.
|
| Vol 52, No 2 (2018) |
Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure |
(Eng)
|
|
Tyschenko I.E., Krivyakin G.K., Volodin V.A.
|
| Vol 52, No 1 (2018) |
On a New Mechanism for the Realization of Ohmic Contacts |
(Eng)
|
|
Sachenko A.V., Belyaev A.E., Konakova R.V.
|
| Vol 52, No 1 (2018) |
Combined Ultramicrotomy and Atomic Force Microscopy Study of the Structure of a Bulk Heterojunction in Polymer Solar Cells |
(Eng)
|
|
Alekseev A.M., Al-Afeef A., Hedley G.J., Kharintsev S.S., Efimov A.E., Yedrisov A.T., Dyuzhev N.A., Samuel I.D.
|
| Vol 52, No 1 (2018) |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
(Eng)
|
|
Seredin P.V., Lenshin A.S., Fedyukin A.V., Arsentyev I.N., Zhabotinsky A.V., Nikolaev D.N., Leiste H., Rinke M.
|
| Vol 52, No 1 (2018) |
Study of the Structure of Cadmium-Sulfide Nanowire Crystals Synthesized by Vacuum Evaporation and Condensation in a Quasi-Closed Volume |
(Eng)
|
|
Belyaev A.P., Antipov V.V., Rubets V.P.
|
| Vol 52, No 1 (2018) |
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) |
(Eng)
|
|
Solov’ev V.A., Chernov M.Y., Sitnikova A.A., Brunkov P.N., Meltser B.Y., Ivanov S.V.
|
| Vol 52, No 1 (2018) |
Investigation of the Modified Structure of a Quantum Cascade Laser |
(Eng)
|
|
Mamutin V.V., Maleev N.A., Vasilyev A.P., Ilyinskaya N.D., Zadiranov Y.M., Usikova A.A., Yagovkina M.A., Shernyakov Y.M., Ustinov V.M.
|
| Vol 51, No 12 (2017) |
Patterning approach for detecting defect in device manufacturing |
(Eng)
|
|
Vikram A., Agarwal V.
|
| Vol 51, No 12 (2017) |
The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode |
(Eng)
|
|
Ganiyev S., Azim Khairi M., Ahmad Fauzi D., Abdullah Y., Hasbullah N.F.
|
| Vol 51, No 10 (2017) |
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure |
(Eng)
|
|
Tyschenko I.E., Cherkov A.G.
|
| Vol 51, No 10 (2017) |
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region |
(Eng)
|
|
Krivyakin G.K., Volodin V.A., Shklyaev A.A., Mortet V., More-Chevalier J., Ashcheulov P., Remes Z., Stuchliková T.H., Stuchlik J.
|
| Vol 51, No 10 (2017) |
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures |
(Eng)
|
|
Alfimova D.L., Lunin L.S., Lunina M.L., Arustamyan D.A., Kazakova A.E., Chebotarev S.N.
|
| Vol 51, No 10 (2017) |
(FeIn2S4)x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap |
(Eng)
|
|
Bodnar I.V., Barugu T.G., Kasyuk Y.V., Fedotova Y.A.
|
| Vol 51, No 9 (2017) |
Formation of low-dimensional structures in the InSb/AlAs heterosystem |
(Eng)
|
|
Abramkin D.S., Bakarov A.K., Putyato M.A., Emelyanov E.A., Kolotovkina D.A., Gutakovskii A.K., Shamirzaev T.S.
|
| Vol 51, No 9 (2017) |
Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films |
(Eng)
|
|
Tyschenko I.E., Cherkov A.G., Volodin V.A., Voelskow M.
|
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