| Issue |
Title |
File |
| Vol 50, No 12 (2016) |
On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells |
(Eng)
|
|
Yablonsky A.N., Zhukavin R.K., Bekin N.A., Novikov A.V., Yurasov D.V., Shaleev M.V.
|
| Vol 50, No 12 (2016) |
Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm |
(Eng)
|
|
Akimov A.N., Klimov A.E., Morozov S.V., Suprun S.P., Epov V.S., Ikonnikov A.V., Fadeev M.A., Rumyantsev V.V.
|
| Vol 50, No 11 (2016) |
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source |
(Eng)
|
|
Daniltsev V.M., Demidov E.V., Drozdov M.N., Drozdov Y.N., Kraev S.A., Surovegina E.A., Shashkin V.I., Yunin P.A.
|
| Vol 50, No 11 (2016) |
Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range |
(Eng)
|
|
Pavelyev D.G., Vasilev A.P., Kozlov V.A., Koschurinov Y.I., Obolenskaya E.S., Obolensky S.V., Ustinov V.M.
|
| Vol 50, No 11 (2016) |
Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications |
(Eng)
|
|
Dorokhin M.V., Pavlov D.A., Bobrov A.I., Danilov Y.A., Lesnikov V.P., Zvonkov B.N., Zdoroveyshchev A.V., Kudrin A.V., Demina P.B., Usov Y.V., Nikolichev D.E., Kryukov R.N., Zubkov S.Y.
|
| Vol 50, No 11 (2016) |
Magnetospectroscopy of double HgTe/CdHgTe quantum wells |
(Eng)
|
|
Bovkun L.S., Krishtopenko S.S., Ikonnikov A.V., Aleshkin V.Y., Kadykov A.M., Ruffenach S., Consejo C., Teppe F., Knap W., Orlita M., Piot B., Potemski M., Mikhailov N.N., Dvoretskii S.A., Gavrilenko V.I.
|
| Vol 50, No 11 (2016) |
Germanium laser with a hybrid surface plasmon mode |
(Eng)
|
|
Dubinov A.A.
|
| Vol 50, No 11 (2016) |
Study of the structures of cleaved cross sections by Raman spectroscopy |
(Eng)
|
|
Plankina S.M., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Konnova N.Y., Nezhdanov A.V., Pashenkin I.Y.
|
| Vol 50, No 11 (2016) |
On the crystal structure and thermoelectric properties of thin Si1–xMnx films |
(Eng)
|
|
Erofeeva I.V., Dorokhin M.V., Lesnikov V.P., Zdoroveishchev A.V., Kudrin A.V., Pavlov D.A., Usov U.V.
|
| Vol 50, No 11 (2016) |
Wide-aperture total absorption of a terahertz wave in a nanoperiodic graphene-based plasmon structure |
(Eng)
|
|
Polischuk O.V., Melnikova V.S., Popov V.V.
|
| Vol 50, No 11 (2016) |
Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon |
(Eng)
|
|
Zhukavin R.K., Kovalevsky K.A., Orlov M.L., Tsyplenkov V.V., Hübers H., Dessmann N., Kozlov D.V., Shastin V.N.
|
| Vol 50, No 11 (2016) |
Investigation of the thermal stability of metastable GeSn epitaxial layers |
(Eng)
|
|
Martovitsky V.P., Sadofyev Y.G., Klekovkin A.V., Saraikin V.V., Vasil’evskii I.S.
|
| Vol 50, No 11 (2016) |
Anharmonic Bloch oscillations of electrons in electrically biased superlattices |
(Eng)
|
|
Ivanov K.A., Girshova E.I., Kaliteevski M.A., Clark S.J., Gallant A.J.
|
| Vol 50, No 11 (2016) |
Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes |
(Eng)
|
|
Baidus N.V., Kukushkin V.A., Zvonkov B.N., Nekorkin S.M.
|
| Vol 50, No 11 (2016) |
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn |
(Eng)
|
|
Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Drozdov M.N.
|
| Vol 50, No 11 (2016) |
Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands |
(Eng)
|
|
Shmagin V.B., Vdovichev S.N., Morozova E.E., Novikov A.V., Shaleev M.V., Shengurov D.V., Krasilnik Z.F.
|
| Vol 50, No 11 (2016) |
Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films |
(Eng)
|
|
Klimov A.E., Epov V.S.
|
| Vol 50, No 11 (2016) |
Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser |
(Eng)
|
|
Baydus N.V., Nekorkin S.M., Kolpakov D.A., Ershov A.V., Aleshkin V.Y., Dubinov A.A., Afonenko A.A.
|
| Vol 50, No 11 (2016) |
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes |
(Eng)
|
|
Shamirzaev V.T., Gaisler V.A., Shamirzaev T.S.
|
| Vol 50, No 11 (2016) |
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence |
(Eng)
|
|
Kosarev A.N., Chaldyshev V.V., Preobrazhenskii V.V., Putyato M.A., Semyagin B.R.
|
| Vol 50, No 11 (2016) |
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon |
(Eng)
|
|
Cirlin G.E., Shtrom I.V., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Bouravleuv A.D., Soshnikov I.P.
|
| Vol 50, No 11 (2016) |
On the condensation of exciton polaritons in microcavities induced by a magnetic field |
(Eng)
|
|
Kochereshko V.P., Avdoshina D.V., Savvidis P., Tsintzos S.I., Hatzopoulos Z., Kavokin A.V., Besombes L., Mariette H.
|
| Vol 50, No 11 (2016) |
Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields |
(Eng)
|
|
Balagula R.M., Vinnichenko M.Y., Makhov I.S., Firsov D.A., Vorobjev L.E.
|
| Vol 50, No 11 (2016) |
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method |
(Eng)
|
|
Lobanov D.N., Novikov A.V., Yunin P.A., Skorohodov E.V., Shaleev M.V., Drozdov M.N., Khrykin O.I., Buzanov O.A., Alenkov V.V., Folomin P.I., Gritsenko A.B.
|
| Vol 50, No 11 (2016) |
Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells |
(Eng)
|
|
Bolshakov A.S., Chaldyshev V.V., Zavarin E.E., Sakharov A.V., Lundin V.V., Tsatsulnikov A.F.
|
| 26 - 50 of 53 Items |
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