| 期 |
标题 |
文件 |
| 卷 50, 编号 12 (2016) |
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
(Eng)
|
|
Shtrom I., Bouravleuv A., Samsonenko Y., Khrebtov A., Soshnikov I., Reznik R., Cirlin G., Dhaka V., Perros A., Lipsanen H.
|
| 卷 50, 编号 12 (2016) |
Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates |
(Eng)
|
|
Yunin P., Drozdov Y., Chernov V., Isaev V., Bogdanov S., Muchnikov A.
|
| 卷 50, 编号 11 (2016) |
Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon |
(Eng)
|
|
Zhukavin R., Kovalevsky K., Orlov M., Tsyplenkov V., Hübers H., Dessmann N., Kozlov D., Shastin V.
|
| 卷 50, 编号 11 (2016) |
Investigation of the thermal stability of metastable GeSn epitaxial layers |
(Eng)
|
|
Martovitsky V., Sadofyev Y., Klekovkin A., Saraikin V., Vasil’evskii I.
|
| 卷 50, 编号 11 (2016) |
Anharmonic Bloch oscillations of electrons in electrically biased superlattices |
(Eng)
|
|
Ivanov K., Girshova E., Kaliteevski M., Clark S., Gallant A.
|
| 卷 50, 编号 11 (2016) |
Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes |
(Eng)
|
|
Baidus N., Kukushkin V., Zvonkov B., Nekorkin S.
|
| 卷 50, 编号 11 (2016) |
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn |
(Eng)
|
|
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Drozdov M.
|
| 卷 50, 编号 11 (2016) |
Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands |
(Eng)
|
|
Shmagin V., Vdovichev S., Morozova E., Novikov A., Shaleev M., Shengurov D., Krasilnik Z.
|
| 卷 50, 编号 11 (2016) |
Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films |
(Eng)
|
|
Klimov A., Epov V.
|
| 卷 50, 编号 11 (2016) |
Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser |
(Eng)
|
|
Baydus N., Nekorkin S., Kolpakov D., Ershov A., Aleshkin V., Dubinov A., Afonenko A.
|
| 卷 50, 编号 11 (2016) |
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes |
(Eng)
|
|
Shamirzaev V., Gaisler V., Shamirzaev T.
|
| 卷 50, 编号 11 (2016) |
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence |
(Eng)
|
|
Kosarev A., Chaldyshev V., Preobrazhenskii V., Putyato M., Semyagin B.
|
| 卷 50, 编号 11 (2016) |
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon |
(Eng)
|
|
Cirlin G., Shtrom I., Reznik R., Samsonenko Y., Khrebtov A., Bouravleuv A., Soshnikov I.
|
| 卷 50, 编号 11 (2016) |
On the condensation of exciton polaritons in microcavities induced by a magnetic field |
(Eng)
|
|
Kochereshko V., Avdoshina D., Savvidis P., Tsintzos S., Hatzopoulos Z., Kavokin A., Besombes L., Mariette H.
|
| 卷 50, 编号 11 (2016) |
Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields |
(Eng)
|
|
Balagula R., Vinnichenko M., Makhov I., Firsov D., Vorobjev L.
|
| 卷 50, 编号 11 (2016) |
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method |
(Eng)
|
|
Lobanov D., Novikov A., Yunin P., Skorohodov E., Shaleev M., Drozdov M., Khrykin O., Buzanov O., Alenkov V., Folomin P., Gritsenko A.
|
| 卷 50, 编号 11 (2016) |
Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells |
(Eng)
|
|
Bolshakov A., Chaldyshev V., Zavarin E., Sakharov A., Lundin V., Tsatsulnikov A.
|
| 卷 50, 编号 11 (2016) |
Dynamic generation of spin-wave currents in hybrid structures |
(Eng)
|
|
Lyapilin I., Okorokov M.
|
| 卷 50, 编号 11 (2016) |
Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates |
(Eng)
|
|
Yablonsky A., Morozov S., Gaponova D., Aleshkin V., Shengurov V., Zvonkov B., Vikhrova O., Baidus’ N., Krasil’nik Z.
|
| 卷 50, 编号 11 (2016) |
Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires |
(Eng)
|
|
Mozharov A., Kudryashov D., Bolshakov A., Cirlin G., Gudovskikh A., Mukhin I.
|
| 卷 50, 编号 11 (2016) |
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source |
(Eng)
|
|
Daniltsev V., Demidov E., Drozdov M., Drozdov Y., Kraev S., Surovegina E., Shashkin V., Yunin P.
|
| 卷 50, 编号 11 (2016) |
Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range |
(Eng)
|
|
Pavelyev D., Vasilev A., Kozlov V., Koschurinov Y., Obolenskaya E., Obolensky S., Ustinov V.
|
| 卷 50, 编号 11 (2016) |
Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications |
(Eng)
|
|
Dorokhin M., Pavlov D., Bobrov A., Danilov Y., Lesnikov V., Zvonkov B., Zdoroveyshchev A., Kudrin A., Demina P., Usov Y., Nikolichev D., Kryukov R., Zubkov S.
|
| 卷 50, 编号 11 (2016) |
Magnetospectroscopy of double HgTe/CdHgTe quantum wells |
(Eng)
|
|
Bovkun L., Krishtopenko S., Ikonnikov A., Aleshkin V., Kadykov A., Ruffenach S., Consejo C., Teppe F., Knap W., Orlita M., Piot B., Potemski M., Mikhailov N., Dvoretskii S., Gavrilenko V.
|
| 卷 50, 编号 11 (2016) |
Germanium laser with a hybrid surface plasmon mode |
(Eng)
|
|
Dubinov A.
|
| 26 - 50 的 53 信息 |
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