XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

标题 文件
卷 50, 编号 12 (2016) Surface passivation of GaAs nanowires by the atomic layer deposition of AlN PDF
(Eng)
Shtrom I., Bouravleuv A., Samsonenko Y., Khrebtov A., Soshnikov I., Reznik R., Cirlin G., Dhaka V., Perros A., Lipsanen H.
卷 50, 编号 12 (2016) Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates PDF
(Eng)
Yunin P., Drozdov Y., Chernov V., Isaev V., Bogdanov S., Muchnikov A.
卷 50, 编号 11 (2016) Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon PDF
(Eng)
Zhukavin R., Kovalevsky K., Orlov M., Tsyplenkov V., Hübers H., Dessmann N., Kozlov D., Shastin V.
卷 50, 编号 11 (2016) Investigation of the thermal stability of metastable GeSn epitaxial layers PDF
(Eng)
Martovitsky V., Sadofyev Y., Klekovkin A., Saraikin V., Vasil’evskii I.
卷 50, 编号 11 (2016) Anharmonic Bloch oscillations of electrons in electrically biased superlattices PDF
(Eng)
Ivanov K., Girshova E., Kaliteevski M., Clark S., Gallant A.
卷 50, 编号 11 (2016) Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes PDF
(Eng)
Baidus N., Kukushkin V., Zvonkov B., Nekorkin S.
卷 50, 编号 11 (2016) Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn PDF
(Eng)
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Drozdov M.
卷 50, 编号 11 (2016) Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands PDF
(Eng)
Shmagin V., Vdovichev S., Morozova E., Novikov A., Shaleev M., Shengurov D., Krasilnik Z.
卷 50, 编号 11 (2016) Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films PDF
(Eng)
Klimov A., Epov V.
卷 50, 编号 11 (2016) Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser PDF
(Eng)
Baydus N., Nekorkin S., Kolpakov D., Ershov A., Aleshkin V., Dubinov A., Afonenko A.
卷 50, 编号 11 (2016) Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes PDF
(Eng)
Shamirzaev V., Gaisler V., Shamirzaev T.
卷 50, 编号 11 (2016) Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence PDF
(Eng)
Kosarev A., Chaldyshev V., Preobrazhenskii V., Putyato M., Semyagin B.
卷 50, 编号 11 (2016) Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon PDF
(Eng)
Cirlin G., Shtrom I., Reznik R., Samsonenko Y., Khrebtov A., Bouravleuv A., Soshnikov I.
卷 50, 编号 11 (2016) On the condensation of exciton polaritons in microcavities induced by a magnetic field PDF
(Eng)
Kochereshko V., Avdoshina D., Savvidis P., Tsintzos S., Hatzopoulos Z., Kavokin A., Besombes L., Mariette H.
卷 50, 编号 11 (2016) Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields PDF
(Eng)
Balagula R., Vinnichenko M., Makhov I., Firsov D., Vorobjev L.
卷 50, 编号 11 (2016) Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method PDF
(Eng)
Lobanov D., Novikov A., Yunin P., Skorohodov E., Shaleev M., Drozdov M., Khrykin O., Buzanov O., Alenkov V., Folomin P., Gritsenko A.
卷 50, 编号 11 (2016) Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells PDF
(Eng)
Bolshakov A., Chaldyshev V., Zavarin E., Sakharov A., Lundin V., Tsatsulnikov A.
卷 50, 编号 11 (2016) Dynamic generation of spin-wave currents in hybrid structures PDF
(Eng)
Lyapilin I., Okorokov M.
卷 50, 编号 11 (2016) Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates PDF
(Eng)
Yablonsky A., Morozov S., Gaponova D., Aleshkin V., Shengurov V., Zvonkov B., Vikhrova O., Baidus’ N., Krasil’nik Z.
卷 50, 编号 11 (2016) Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires PDF
(Eng)
Mozharov A., Kudryashov D., Bolshakov A., Cirlin G., Gudovskikh A., Mukhin I.
卷 50, 编号 11 (2016) Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source PDF
(Eng)
Daniltsev V., Demidov E., Drozdov M., Drozdov Y., Kraev S., Surovegina E., Shashkin V., Yunin P.
卷 50, 编号 11 (2016) Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range PDF
(Eng)
Pavelyev D., Vasilev A., Kozlov V., Koschurinov Y., Obolenskaya E., Obolensky S., Ustinov V.
卷 50, 编号 11 (2016) Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications PDF
(Eng)
Dorokhin M., Pavlov D., Bobrov A., Danilov Y., Lesnikov V., Zvonkov B., Zdoroveyshchev A., Kudrin A., Demina P., Usov Y., Nikolichev D., Kryukov R., Zubkov S.
卷 50, 编号 11 (2016) Magnetospectroscopy of double HgTe/CdHgTe quantum wells PDF
(Eng)
Bovkun L., Krishtopenko S., Ikonnikov A., Aleshkin V., Kadykov A., Ruffenach S., Consejo C., Teppe F., Knap W., Orlita M., Piot B., Potemski M., Mikhailov N., Dvoretskii S., Gavrilenko V.
卷 50, 编号 11 (2016) Germanium laser with a hybrid surface plasmon mode PDF
(Eng)
Dubinov A.
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