| Issue |
Title |
File |
| Vol 53, No 4 (2019) |
Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode |
(Eng)
|
|
Kyuregyan A.S.
|
| Vol 53, No 4 (2019) |
High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects |
(Eng)
|
|
Kyuregyan A.S.
|
| Vol 53, No 4 (2019) |
Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink |
(Eng)
|
|
Gorbatyuk A.V., Ivanov B.V.
|
| Vol 53, No 4 (2019) |
Formation of Porous Silicon by Nanopowder Sintering |
(Eng)
|
|
Astrova E.V., Voronkov V.B., Nashchekin A.V., Parfeneva A.V., Lozhkina D.A., Tomkovich M.V., Kukushkina Y.A.
|
| Vol 53, No 4 (2019) |
Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities |
(Eng)
|
|
Nikolskaia A.B., Kozlov S.S., Vildanova M.F., Shevaleevskiy O.I.
|
| Vol 53, No 4 (2019) |
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes |
(Eng)
|
|
Dobrov V.A., Kozlovski V.V., Mescheryakov A.V., Usychenko V.G., Chernova A.S., Shabunina E.I., Shmidt N.M.
|
| Vol 53, No 3 (2019) |
EMF Induced in a p–n Junction under a Strong Microwave Field and Light |
(Eng)
|
|
Gulyamov G., Erkaboev U.I., Sharibaev N.Y., Gulyamov A.G.
|
| Vol 53, No 3 (2019) |
Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures |
(Eng)
|
|
Podolska N.I., Rodin P.B.
|
| Vol 53, No 3 (2019) |
Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package) |
(Eng)
|
|
Ivanov P.A., Potapov A.S., Samsonova T.P.
|
| Vol 53, No 3 (2019) |
Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures |
(Eng)
|
|
Kabalnov Y.A., Trufanov A.N., Obolensky S.V.
|
| Vol 53, No 2 (2019) |
Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates |
(Eng)
|
|
Shalimova M.B., Sachuk N.V.
|
| Vol 53, No 2 (2019) |
Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent |
(Eng)
|
|
Grebenshchikova E.A., Sidorov V.G., Shutaev V.A., Yakovlev Y.P.
|
| Vol 53, No 1 (2019) |
On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect |
(Eng)
|
|
Goldman E.I., Nabiev A., Naryshkina V.G., Chucheva G.V.
|
| Vol 53, No 1 (2019) |
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis |
(Eng)
|
|
Khrypunov G.S., Meriuts A.V., Shelest T.N., Khrypunov M.G.
|
| Vol 53, No 1 (2019) |
Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell |
(Eng)
|
|
Svintsov A.A., Yakimov E.B., Dorokhin M.V., Demina P.B., Kuznetsov Y.M.
|
| Vol 53, No 1 (2019) |
Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well |
(Eng)
|
|
Bochkareva N.I., Ivanov A.M., Klochkov A.V., Shreter Y.G.
|
| Vol 53, No 1 (2019) |
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure |
(Eng)
|
|
Kuzmichev N.D., Vasyutin M.A.
|
| Vol 53, No 1 (2019) |
Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor |
(Eng)
|
|
Kulikov N.A., Popov V.D.
|
| Vol 52, No 16 (2018) |
Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications |
(Eng)
|
|
Ajayan J., Ravichandran T., Mohankumar P., Prajoon P., Pravin J.C., Nirmal D.
|
| Vol 52, No 16 (2018) |
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode |
(Eng)
|
|
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
|
| Vol 52, No 16 (2018) |
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices |
(Eng)
|
|
Seyidov M.Y., Suleymanov R.A., Şale Y., Kandemir B.B.
|
| Vol 52, No 13 (2018) |
nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm |
(Eng)
|
|
Kulikov V.B., Maslov D.V., Sabirov A.R., Solodkov A.A., Dudin A.L., Katsavets N.I., Kogan I.V., Shukov I.V., Chaly V.P.
|
| Vol 52, No 13 (2018) |
GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) |
(Eng)
|
|
Khvostikov V.P., Sorokina S.V., Potapovich N.S., Levin R.V., Marichev A.E., Timoshina N.K., Pushnyi B.V.
|
| Vol 52, No 13 (2018) |
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation |
(Eng)
|
|
Khvostikov V.P., Kalinovskiy V.S., Sorokina S.V., Shvarts M.Z., Potapovich N.S., Khvostikova O.A., Vlasov A.S., Andreev V.M.
|
| Vol 52, No 13 (2018) |
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles |
(Eng)
|
|
Strel’chuk A.M., Kozlovski V.V., Lebedev A.A.
|
| 26 - 50 of 198 Items |
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