| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
|
| 卷 50, 编号 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium |
|
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range |
|
| 卷 51, 编号 9 (2017) |
Physics of Semiconductor Devices |
Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes |
|
| 卷 52, 编号 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
|
| 卷 52, 编号 9 (2018) |
Physics of Semiconductor Devices |
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range |
|
| 卷 52, 编号 10 (2018) |
Physics of Semiconductor Devices |
Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures |
|
| 卷 53, 编号 1 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE |
|
| 卷 53, 编号 2 (2019) |
Physics of Semiconductor Devices |
Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent |
|
| 卷 53, 编号 3 (2019) |
Review |
Discovery of III–V Semiconductors: Physical Properties and Application |
|
| 卷 53, 编号 6 (2019) |
Physics of Semiconductor Devices |
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection |
|
| 卷 53, 编号 10 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Influence of Hydrogen on the Electrical Properties of Pd/InP Structures |
|
