Автор туралы ақпарат

Yakovlev, Yu. P.

Шығарылым Бөлім Атауы Файл
Том 50, № 6 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers
Том 50, № 7 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium
Том 50, № 10 (2016) Physics of Semiconductor Devices Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range
Том 51, № 9 (2017) Physics of Semiconductor Devices Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes
Том 52, № 8 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW
Том 52, № 9 (2018) Physics of Semiconductor Devices GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range
Том 52, № 10 (2018) Physics of Semiconductor Devices Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures
Том 53, № 1 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE
Том 53, № 2 (2019) Physics of Semiconductor Devices Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent
Том 53, № 3 (2019) Review Discovery of III–V Semiconductors: Physical Properties and Application
Том 53, № 6 (2019) Physics of Semiconductor Devices Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection
Том 53, № 10 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Influence of Hydrogen on the Electrical Properties of Pd/InP Structures

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