作者的详细信息

Obolensky, S.

栏目 标题 文件
卷 50, 编号 3 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
卷 50, 编号 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range
卷 50, 编号 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
卷 50, 编号 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
卷 51, 编号 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects
卷 51, 编号 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Optimization of the superlattice parameters for THz diodes
卷 51, 编号 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
卷 52, 编号 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation
卷 52, 编号 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
卷 53, 编号 3 (2019) Physics of Semiconductor Devices Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures
卷 53, 编号 10 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors
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