| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
|
| 卷 52, 编号 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond |
|
| 卷 53, 编号 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction |
|
| 卷 53, 编号 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers |
|
