| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 3 (2016) |
Physics of Semiconductor Devices |
Microdisk Injection Lasers for the 1.27-μm Spectral Range |
|
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture |
|
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency |
|
| 卷 51, 编号 5 (2017) |
Physics of Semiconductor Devices |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
|
| 卷 52, 编号 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
|
| 卷 52, 编号 14 (2018) |
Lasers and Optoelectronic Devices |
Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks |
|
| 卷 52, 编号 14 (2018) |
Lasers and Optoelectronic Devices |
Diode Lasers with Near-Surface Active Region |
|
| 卷 53, 编号 2 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance |
|
| 卷 53, 编号 8 (2019) |
Physics of Semiconductor Devices |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
|
| 卷 53, 编号 12 (2019) |
Physics of Semiconductor Devices |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
|
| 卷 53, 编号 14 (2019) |
Lasers and Optoelectronic Devices |
Record Low Threshold Current Density in Quantum Dot Microdisk Laser |
|
