Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires
- 作者: Trukhin V.1, Bouravleuv A.2, Mustafin I.1,3, Cirlin G.2, Kakko J.4, Lipsanen H.4
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隶属关系:
- Ioffe Institute
- St. Petersburg Academic University
- ITMO
- Department of Electronics and Nanoengineering
- 期: 卷 52, 编号 1 (2018)
- 页面: 19-23
- 栏目: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/202198
- DOI: https://doi.org/10.1134/S1063782618010244
- ID: 202198
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详细
Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.
作者简介
V. Trukhin
Ioffe Institute
编辑信件的主要联系方式.
Email: valera.truchin@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg Academic University
Email: valera.truchin@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Mustafin
Ioffe Institute; ITMO
Email: valera.truchin@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101
G. Cirlin
St. Petersburg Academic University
Email: valera.truchin@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
J. Kakko
Department of Electronics and Nanoengineering
Email: valera.truchin@mail.ioffe.ru
芬兰, Espoo, FIN-02150
H. Lipsanen
Department of Electronics and Nanoengineering
Email: valera.truchin@mail.ioffe.ru
芬兰, Espoo, FIN-02150